Structural and Optical Investigation of GaInP Quantum Dots According to the Growth Thickness for the 700 nm Light Emitters

Abstract

We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating a Stranski-Krastanov growth mode. As the ambient temperature is increased to 300 K, the PL spectrum of the B-type dots is annihilated quickly because the large dot size induces a defect-related nonradiative recombination process. In contrast, the PL spectrum of the A-type dots is well maintained to 300 K. These data indicate that the Ga0.33In0.67P material is appropriate for an active layer of 700 nm light emitters.

Red-Shifted Excitation and Two-Photon Pumping of Biointegrated GaInP/AlGaInP Quantum Well Microlasers

“… 24 Due to these limitations, far-red emitting quantum-confined AlGaInP structures reported so far have suffered from significantly reduced performance. 25 …”

“…Furthermore, reducing the aluminum content in the barrier lowers its band gap, which enables absorption of longer wavelengths, however with the drawback of reduced electron confinement in the well . Due to these limitations, far-red emitting quantum-confined AlGaInP structures reported so far have suffered from significantly reduced performance …”

“…24 Due to these limitations, far-red emitting quantum-confined AlGaInP structures reported so far have suffered from significantly reduced performance. 25 Weighing the different factors discussed above, three new multi-quantum well structures were fabricated: Wafer B (Ga 0.39 In 0.61 P wells, Al 0.255 Ga 0.255 In 0.49 P barriers), Wafer C (Ga 0.39 In 0.61 P wells, Al 0.204 Ga 0.306 In 0.49 P barriers), and Wafer D (Ga 0.37 In 0.63 P wells, Al 0.255 Ga 0.255 In 0.49 P barriers). In contrast to Wafer A, all new structures have 10 nm wide wells and barriers (Figure 1b).…”