Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

Gogova, D.; Petrov, Petar; Buegler, Max; Wagner, Markus R.; Nenstiel, Christian; Callsen, Gordon; Schmidbauer, M.; Kucharski, Robert; Zając, M.; Dwiliński, R.; Phillips, M. R.; Hoffmann, Axel; Fornari, R.

doi:10.1063/1.4807581

Cited by 48 publications

(26 citation statements)

References 34 publications

(37 reference statements)

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“…6 shows XRD reciprocal space maps around ð0002Þ and ð1124Þ reflections. The lattice constants c¼ 5.1852 Å and a¼ 3.1891 Å were calculated from the RSMs and are in excellent agreement with the previously reported lattice constants for high quality ammonothermal bulk GaN [2] and recent report on stress free ammonothermal GaN [26]. To evaluate the strain distribution within the sample, the variations in the in plane and out of plane strain components ϵ a and ϵ c were estimated using the maximum value of the RSMs as a reference value and the half width of the reciprocal space points as the deviated value.…”

Section: Resultsmentioning

confidence: 58%

Defect structure of a free standing GaN wafer grown by the ammonothermal method

Sintonen

Suihkonen

Jussila

et al. 2014

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 58%

Defect structure of a free standing GaN wafer grown by the ammonothermal method

Sintonen

Suihkonen

Jussila

et al. 2014

Journal of Crystal Growth

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“…Both ammonobasic and ammonoacidic conditions are used for large scale syntheses, in which AlN [78] requires the highest growth temperatures and InN the lowest [43]. The ammonobasic method enables the growth of GaN wafers up to two inches in diameter [202] or bulk single crystals of 10 mm 2 by 1 mm thick [43] and dislocation density below 5 · 10 4 cm 2 [203]. Maximal growth rates of up to 40 µm/h (=960 µm/d) with rates of 10-30 µm/h (=240-720 µm/d) for all planes were reported [39].…”

Section: Group III and Iv Nitridesmentioning

confidence: 99%

Chemistry of Ammonothermal Synthesis

2014

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Ammonothermal synthesis is a method for synthesis and crystal growth suitable for a large range of chemically different materials, such as nitrides (e.g., GaN, AlN), amides (e.g., LiNH 2 , Zn(NH 2 ) 2 ), imides (e.g., Th(NH) 2 ), ammoniates (e.g., Ga(NH 3 ) 3 F 3 , [Al(NH 3 ) 6 ]I 3 · NH 3 ) and non-nitrogen compounds like hydroxides, hydrogen sulfides and polychalcogenides (e.g., NaOH, LiHS, CaS, Cs 2 Te 5 ). In particular, large scale production of high quality crystals is possible, due to comparatively simple scalability of the experimental set-up. The ammonothermal method is defined as employing a heterogeneous reaction in ammonia as one homogenous fluid close to or in supercritical state. Three types of milieus may be applied during ammonothermal synthesis: ammonobasic, ammononeutral or ammonoacidic, evoked by the used starting materials and mineralizers, strongly influencing the obtained products. There is little known about the dissolution and materials transport processes or the deposition mechanisms during ammonothermal crystal growth. However, the initial results indicate the possible nature of different intermediate species present in the respective milieus. A Alkali or alkaline-earth metal, A(1) = alkali metal, A(2) = alkaline-earth metal B Further metal, might be main group metal, transition or rare-earth metal M Transition metal, excluding Sc, Y, La R Rare-earth metal, Sc, Y, La-Lu X Halide E Other main group element

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“…14 Ammonothermal GaN has also been characterized by positron annihilation spectroscopy 15 x-ray diffraction and micro-Raman measurements. 16 Our recent SR-XRT study on ammonothermal GaN reported on defects with similar appearance to micropipes in SiC 17 and raised the question if the observed defects are also super screw dislocations or micropipes.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

Sintonen

Rudziński

Suihkonen

et al. 2014

Journal of Applied Physics

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The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results

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Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

Cited by 48 publications

References 34 publications

Defect structure of a free standing GaN wafer grown by the ammonothermal method

Defect structure of a free standing GaN wafer grown by the ammonothermal method

Chemistry of Ammonothermal Synthesis

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

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