2004
DOI: 10.1016/j.tsf.2003.11.105
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Structural and optical characterization of undoped and indium-doped CdS films grown by pulsed laser deposition

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Cited by 79 publications
(31 citation statements)
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“…As mentioned before, the narrow peak at 2.518 eV near to the band edge region: in the undoped CdS film is due to excitonic recombination. The broader PL bands at approximately 2.50 eV and 2.48 eV in the CdS:In (1%) and CdS:In (5%), respectively, are attributed to free electron-hole pairs recombinations [7]. In this figure it is also noticed that the peaks became wider with doping and the positions of the peaks are also shifted towards lower energy with doping.…”
Section: The Influence Of Dopingmentioning
confidence: 53%
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“…As mentioned before, the narrow peak at 2.518 eV near to the band edge region: in the undoped CdS film is due to excitonic recombination. The broader PL bands at approximately 2.50 eV and 2.48 eV in the CdS:In (1%) and CdS:In (5%), respectively, are attributed to free electron-hole pairs recombinations [7]. In this figure it is also noticed that the peaks became wider with doping and the positions of the peaks are also shifted towards lower energy with doping.…”
Section: The Influence Of Dopingmentioning
confidence: 53%
“…It consists of two prominent broad bands approximately 2.3 eV (green emission) and 1.6 eV (red emission). Also Figure 3a displays the PL spectra of CdS thin films prepared by pulsed laser deposition technique grown on quartz substrates by Perna et al [7]. For undoped CdS film they observed an emission at 2.518 eV which is due to excitonic recombination, and a broad PL band at approximately 2.0 eV which is attributed to radiative recombination involving impurity and/or defect levels.…”
Section: Photoluminescence Of Untreated Cds Filmsmentioning
confidence: 92%
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