Structural and morphological properties of zinc oxide thin films grown on silicon substrates

Ng, Sha Shiong; Ooi, P. K.; Ching, C. G.; Hassan, Z.; Hassan, H. Abu; Abdullah, M.J.

doi:10.1063/1.4803614

Cited by 1 publication

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“…Zinc oxide (ZnO) is of interest as a result of its potential applications in ultraviolet (UV) optoelectronic devices due to its wide band gap of approximately 3.4 eV at room temperature and high exciton binding energy of approximately 60 meV [ 4 ]. Moreover, ZnO is thermally and chemically stable in ambient air, highly transparent in the visible region (>85%) [ 5 ], resistant to be oxidized, easy to fabricate, and relatively cheap compared to other optoelectronic materials [ 6 ]. So far, a variety of techniques have been utilized to grow ZnO thin films, such as, sputtering [ 7 ], molecular beam epitaxy (MBE) [ 8 ], pulsed laser deposition [ 9 ], and chemical vapor deposition [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111)

et al. 2015

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ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and I-V measurements were carried out to characterize structural, electrical, and optical properties. After introducing a 60-nm-thick AlN buffer layer, the growth direction of the ZnO films was changed from [10] to [0002]. Meanwhile, the ZnO crystalline quality was significantly improved as verified by both XRD and PL analyses. It has been demonstrated that the reverse leakage current was greatly reduced with the AlN buffer layer. The valence band offsets have been determined to be 3.06, 2.95, and 0.83 eV for ZnO/Si, ZnO/AlN, and AlN/Si heterojunctions, respectively, and the band alignment of ZnO/Si heterojunction was modified to be 0.72 eV after introducing the AlN buffer layer. Our work offered a potential way to fabricate Si-based ultraviolet light-emitting diodes and improve the device performances.

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