Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy

Abstract

Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy

Effects of strain on the band structure of group-III nitrides

“…8,11,63,64 on the other hand, found no appreciable QW thickness effect. 70 They proposed strain to be the dominant factor, and derived a large shear-strain deformation potential of D 6 =-8.8 eV from their measurements.…”

“…For this reason, growth in nonpolar and semipolar orientations, which avoid the polarization fields, has been pursued to improve the device efficiencies. 8,9,56 In such nonpolar and semipolar In x Ga 1−x N layers, strain plays a crucial role in determining the polarization character of the emitted light. In this Section we explore the effects of strain on In x Ga 1−x N alloys in detail.…”

Anisotropic strain and phonon deformation potentials in GaN

“…28 The a-plane HVPE films were grown directly on sapphire in a three-zone horizontal reactor at 1040-1070°C. 29 Schematic drawings of the relative orientations of the anisotropically strained GaN films on their substrates are shown for c-plane GaN on a-plane sapphire in Fig. 1͑a͒ and a-plane GaN on r-plane sapphire in Fig.…”

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells

“…In order to improve the structural quality of the samples, we processed the templates using the epitaxial lateral overgrowth (ELO) technique [5][6][7]. The reduction of the stacking fault density is then evidenced by the increase of near band edge PL emission intensity compared to that of the 3.42 eV band at T = 10 K [19,20].…”

“…Yet, the growth of nonpolar GaN layers is complicated because of adatom incorporation anisotropy between [0 0 0 1] and nonpolar axes [4]. Moreover, nonpolar GaN grown on foreign substrates exhibits high densities of extended defects such as stacking faults [5][6][7][8], and a broad defect-related emission line centered at 3.42 eV usually appears to the detriment of the near band-edge emission at 3.47 eV at low temperature (T < 10 K). Whereas this line is seldom observed in c-plane GaN [9][10][11][12][13], it is generally encountered in nonpolar GaN and has been attributed to the recombination of excitons bound to intrinsic I 1 -type basal plane stacking faults (BSFs) [14].…”