Structural and magnetic properties of planar nanowire arrays of Co grown on oxidized vicinal silicon (111) templates

Arora, S. K.; O'Dowd, B. J.; Nistor, Corneliu; Balashov, T.; Ballesteros, Belén; Rizzini, A. Lodi; Kavich, J. J.; Dhesi, S. S.; Gambardella, Pietro; Shvets, I. V.

doi:10.1063/1.3679033

Cited by 6 publications

(2 citation statements)

References 21 publications

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“…From a technological perspective the patterning of surfaces is used in various experiments for the guided synthesis of nano-objects with reduced dimensionality -nano-dots, nanowires, etc. [21][22][23][24][25][26]. As noted the self-assembly of macro-scale steps under the influence of electro-migration is not limited to Si, one of the first observed such systems is probably the surface of tungsten, where systematic studies on the effect of electric fields on tungsten began with lamp filaments [27].…”

Section: Step Bunching On W(110) Surfacementioning

confidence: 99%

Step bunching with both directions of the current: Vicinal W(110) surfaces versus atomistic-scale model

et al. 2018

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We report for the first time the observation of bunching of monoatomic steps on vicinal W(110) surfaces induced by step up or step down currents across the steps. Measurements reveal that the size scaling exponent γ, connecting the maximal slope of a bunch with its height, differs depending on the current direction. We provide a numerical perspective by using an atomistic scale model with a conserved surface flux to mimic experimental conditions, and also for the first time show that there is an interval of parameters in which the vicinal surface is unstable against step bunching for both directions of the adatom drift.

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Section: Step Bunching On W(110) Surfacementioning

confidence: 99%

Step bunching with both directions of the current: Vicinal W(110) surfaces versus atomistic-scale model

et al. 2018

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“…Epitaxial crystal growth is often accompanied by surface morphology changes such as island nucleation and the meandering of atomic steps (Michely and Krug, 2012). Understanding the microscopic mechanisms underlying surface patterning is a problem of fundamental interest with applications including the nanopatterning of semiconductors and metallic surfaces (Tsivion et al, 2011;Arora et al, 2012). Whereas the first crystal growth model of step dynamics was introduced by Burton et al (1951) before any direct observations of atomic steps, the advent a few decades later of atomic scale microscopy imaging, has fostered many theoretical works on the step flow model (Krug, 2005;Misbah et al, 2010).…”

Section: Introductionmentioning

confidence: 99%

Revisiting step instabilities on crystal surfaces. Part I: The quasistatic approximation

Guin,

Jabbour,

Triantafyllidis

2021

Preprint

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Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the propagation of atomic steps, a process called step-flow growth. In some instances, the steps tend to form close groups (or bunches), a phenomenon termed step bunching, which corresponds to an instability of the equalspacing step propagation. Over the last fifty years, various mechanisms have been proposed to explain step bunching, the most prominent of which are the inverse Ehrlich-Schwoebel effect (i.e., the asymmetry which favors the attachment of adatoms from the upper terrace), elastically mediated interactions between steps (in heteroepitaxy), step permeability (in electromigration-controlled growth), and the chemical effect (which couples the diffusion fields on all terraces). Beyond the discussion of the influence of each of these mechanisms taken independently on the propensity to bunching, we propose a unified treatment of the effect of these mechanisms on the onset of the bunching instability, which also accounts for their interplay. This is done in the setting of the so-called quasistatic approximation, which by permitting mostly analytical treatment, offers a clear view of the influence on stability of the combined mechanisms. In particular, we find that the Ehrlich-Schwoebel effect, elastic step-interactions and the chemical effect combine in a quasiadditive fashion, whereas step permeability is neither stabilizing nor destabilizing per se but changes the relative influence of the three aforementioned mechanisms. In a companion paper, we demonstrate and discuss the importance of another mechanism, which we call the dynamics effect, that emerges when relaxing the simplifying but questionable quasistatic approximation.

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Crystal Structure and Magnetic Properties of Epitaxial Cobalt Thin Films and Single-Crystal Nanostrips Grown on a Stepped Surface Si(111)-5.55×5.55-Cu with a Cu(111) Buffer Layer

Ermakov

Kharitonov

Davydenko

et al. 2022

J Supercond Nov Magn

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Structural and magnetic properties of planar nanowire arrays of Co grown on oxidized vicinal silicon (111) templates

Abstract: Template-based synthesis and magnetic properties of Mn-Zn ferrite nanotube and nanowire arrays

Cited by 6 publications

References 21 publications

Step bunching with both directions of the current: Vicinal W(110) surfaces versus atomistic-scale model

Step bunching with both directions of the current: Vicinal W(110) surfaces versus atomistic-scale model

Revisiting step instabilities on crystal surfaces. Part I: The quasistatic approximation

Crystal Structure and Magnetic Properties of Epitaxial Cobalt Thin Films and Single-Crystal Nanostrips Grown on a Stepped Surface Si(111)-5.55×5.55-Cu with a Cu(111) Buffer Layer

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