Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers

Abstract

Articles you may be interested inEffect of Sb incorporation on structure and magnetic properties of quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) thin films Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy Epitaxial growth and properties of III-V magnetic semiconductor (GaMn)As and its heterostructures GaMnAs layers with Mn contents from 0.05% to 7% were grown by low temperature molecular beam epitaxy. At substrate temperatures lower than 300°C and in this composition range a uniform ternary GaMnAs compound can be grown without MnAs precipitation. Reflection high energy electron diffraction intensity oscillations recorded during GaMnAs growth were used to calibrate the composition of the GaMnAs films with high accuracy ͑better than 0.1%͒. Films containing more than 1% Mn exhibit a ferromagnetic phase transition with Curie temperatures from a few up to 70 K depending on the composition and other growth parameters. In contrast to previous reports we have observed this transition also in the case of layers grown at very low substrate temperatures ͑below 200°C͒.

Ferromagnetic GaMnAs/GaAs superlattices—MBE growth and magnetic properties

“…On the one hand, recent theoretical modelling [1][2][3][4][5] and GaMnAs [6][7][8][9][10][11] have been gaining an of magnetism in GaMnAs quantum well structures [191, increasing interest in recent years due to the expanding based on Monte Carlo simulations on a confinementresearch activity in the field of spintronics [12], where adapted RKKY exchange interaction model, predicts a the possibility of integrating spin-dependent effects into lower limit for the GaMnAs thickness of 9 ML (25 A) the electronic devices seems to be very attractive. In for the ferromagnetic phase to occur.…”

Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga1-xMnxAs

“…The As 2 /Ga flux ratio was constant and equal to 2 for all growth runs. The Mn content was set by the temperature of the Mn effusion cell and verified by measuring the differences in the growth rates between Ga 1−x Mn x As and LTG GaAs using reflection high-energy electron diffraction intensity oscillations [5].…”

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

“…Both the Mn composition and the layer thickness, which are listed in Table 1, were verified during growth by the reflection high-energy electron diffraction (RHEED) intensity oscillations. 24 The layers were subjected to thorough investigations of their properties by means of a number of complementary characterization techniques. The structural properties of the layers were revealed from analysis of the results of high-resolution X-ray diffractometry (XRD) measurements performed at the temperature 27°C with the X-ray diffractometer equipped with a parabolic X-ray mirror and four-bounce Ge 220 monochromator at the incident beam and a three-bounce Ge analyzer at the diffracted beam.…”