2006
DOI: 10.1063/1.2185448
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Structural and magnetic properties of Mn5Ge3 clusters in a dilute magnetic germanium matrix

Abstract: We have characterized the structural and magnetic properties of low-temperature molecular-beam epitaxy grown Ge: Mn by means of high-resolution transmission electron microscopy ͑HR-TEM͒, energy dispersive x-ray spectroscopy, and superconducting quantum interference device ͑SQUID͒ magnetometry. We find a coherent incorporation of Mn 5 Ge 3 clusters in an epitaxially grown Ge: Mn matrix, which shows the characteristics of a diluted magnetic semiconductor phase of Mn-doped Ge. The clusters are preferentially orie… Show more

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Cited by 131 publications
(118 citation statements)
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“…[20] In the sample with x ≈ 0.03 discussed in detail there, reported on in Ref. [20] (T S = 225 • C), the average Mn 5 Ge 3 cluster diameter ≈ 15 nm in Ref.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…[20] In the sample with x ≈ 0.03 discussed in detail there, reported on in Ref. [20] (T S = 225 • C), the average Mn 5 Ge 3 cluster diameter ≈ 15 nm in Ref.…”
Section: Resultsmentioning
confidence: 99%
“…[20] In the sample with x ≈ 0.03 discussed in detail there, reported on in Ref. [20] (T S = 225 • C), the average Mn 5 Ge 3 cluster diameter ≈ 15 nm in Ref. [20] can be regarded as an upper limit for sample Ge 0.96 Mn 0.04 , which lies well below typical values for the critical diameter below which each cluster is expected to exhibit a single domain (≈ 15 to 30 nm).…”
Section: Resultsmentioning
confidence: 99%
“…Bulk thin intermetallic films have been observed on Ge(111), 2 while phase separation was found on a µm scale in single crystals 1 and on a sub-µm scale in MBE fabricated samples. 9 Since the Mn content in ferromagnetic GeMn intermetallic compounds is of the order of 60% and above, 10 compound formation will result in large magnetic moments and a strong influence on the magnetic properties of the system even if the compounds form on a nanometer scale. An identification of intermetallic compounds in structural analysis therefore facilitates the interpretation of the magnetic properties of GeMn films.…”
Section: Introductionmentioning
confidence: 99%
“…Various fabrication techniques have recently been employed to realise GeMn magnetic semiconductors, including single crystal growth, 1 solid phase epitaxy 2 and molecular beam epitaxy (MBE). 3,4,5,6,7,8,9 Irrespective of the fabrication technique, the formation of ferromagnetic, intermetallic compounds can occur. Bulk thin intermetallic films have been observed on Ge(111), 2 while phase separation was found on a µm scale in single crystals 1 and on a sub-µm scale in MBE fabricated samples.…”
Section: Introductionmentioning
confidence: 99%
“…1 For this reason, Ge-based ͑such as GeMn͒ diluted magnetic semiconductors ͑DMSs͒, compatible with the current Si technology, have been studied extensively. [2][3][4][5][6][7][8][9][10][11][12][13] It is well understood that the low solubility of Mn in Ge has been a main barrier to achieve a high T c DMS GeMn film with high Mn concentration and uniformly distributed Mn in Ge. As a consequence, Mn-rich precipitates, such as Mn 5 Ge 3 , 9,14,15 Mn 5 Ge 2 , and Mn 11 Ge 8 , 12 are usually observed and are believed to be responsible for the observed ferromagnetism up to room temperature.…”
mentioning
confidence: 99%