Structural and magnetic properties of N doped ZnO thin films

Abstract

Experimental investigations and first-principle calculations based on density functional theory are effectively combined to shed light on origin of room temperature ferromagnetism in nitrogen doped ZnO (ZnO:N) based intrinsic dilute magnetic semiconductors. ZnO:N thin films grown by pulsed laser deposition show a well defined M-H hysteresis loop at room temperature, reflecting ferromagnetic behavior in contrast to undoped ZnO thin films grown under the same processing condition. Isotropic behavior of magnetism in ZnO:N reveals the dominant contribution of N incorporation on the magnetism and is attributed to p-p interaction between nitrogen and neighboring oxygen atoms having potential for room temperature spintronic applications.

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

“…In particular, Ba-doped ZnO material has not been largely studied, since just ZnO/BaTiO 3 heterojunction [31][32][33][34] and BaO/ZnO interfaces 35 have been recently investigated. The most common atoms inserting in the ZnO structure are N, 36,37 Pd, 37 Mg, 38 Gd 39 atoms and lanthanide metals. 40 Nowadays, theoretical and experimental studies on doped ZnO materials have been performed to propose materials which might be viable alternatives to replace the perovskite materials.…”

Transition from diamagnetic to ferromagnetic state in laser ablated nitrogen doped ZnO thin films

“…23,25 Thus it may be inferred that incorporation of N is the origin of stress in the thin film. The increase in stress due to N incorporation may be attributed to the fact that the ionic radii of N (0.13 Å) is slightly greater than that of O (0.12 Å).…”

“…The magnetization results for 6% ZnO:N thin film are already given in our previous work. 23 Since, 8% resulted in maximum magnetization, so the concentration of N in ZnO:N targets is maintained at 8 at wt%. A KrF excimer laser (λ = 248 nm, 10 Hz) was employed to deposit the ZnO:N thin films onto c-plane sapphire substrates.…”

“…Existence of room temperature ferromagnetism in N doped ZnO (ZnO:N) thin films grown by PLD using the ZnO:N ceramic target in 100% O 2 ambient has been reported in our previous work. 23 The origin of RT ferromagnetism is observed due to p-p hybridization of O 2p and N 2p electrons instead of defects in ZnO:N thin film. 23 The results were in agreement with theoretical prediction on the basis of first principle methods [17][18][19] as well as the recent experimental studies.…”

“…23 The origin of RT ferromagnetism is observed due to p-p hybridization of O 2p and N 2p electrons instead of defects in ZnO:N thin film. 23 The results were in agreement with theoretical prediction on the basis of first principle methods [17][18][19] as well as the recent experimental studies. 20 However, there are few experimental considerations that are critical for the growth of good quality ferromagnetic N doped ZnO thin films and are discussed in the present work.…”