Structural and magnetic anisotropies of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">ZnSe</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>001</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>thin films

Marangolo, M.; Gustavsson, Fredrik; Guichar, G.M.; Eddrief, M.; Varalda, J.; Etgens, V. H.; Rivoire, M.; Giligny, François; Magnan, H.; Mosca, D. H.; George, J. M.

doi:10.1103/physrevb.70.134404

Cited by 23 publications

(24 citation statements)

References 35 publications

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“…2,17 We will discuss the proposed origin of this rather unexpected property in Sec. V. ; and second, although this system is also characterized by a uniaxial anisotropy 18,19 (as revealed by the difference between the black and the green curves in Fig. 3), the degree of the uniaxial contribution is obviously small, i.e., the magnetization reversal with the applied field H along [1 10] is only very slightly "harder" than that with H along [110].…”

Section: Magnetization Measurementsmentioning

confidence: 99%

Magnetic anisotropy in ultrathin Fe films on GaAs, ZnSe, and Ge (001) substrates

Tivakornsasithorn

Liu

et al. 2014

Journal of Applied Physics

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We discuss magnetic anisotropy parameters of ferromagnetic body-centered cubic (bcc) Fe films grown by molecular beam epitaxy (MBE) on (001) substrates of face-centered cubic (fcc) GaAs, ZnSe, and Ge. High-quality MBE growth of these metal/semiconductor combinations is made possible by the fortuitous atomic relationship between the bcc Fe and the underlying fcc semiconductor surfaces, resulting in excellent lattice match. Magnetization measurements by superconducting quantum interference device (SQUID) indicate that the Fe films grown on (001) GaAs surfaces are characterized by a very strong uniaxial in-plane anisotropy; those grown on (001) Ge surfaces have a fully cubic anisotropy; and Fe films grown on ZnSe represent an intermediate case between the preceding two combinations. Ferromagnetic resonance measurements carried out on these three systems provide a strikingly clear quantitative picture of the anisotropy parameters, in excellent agreement with the SQUID results. Based on these results, we propose that the observed anisotropy of cubic Fe films grown in this way results from the surface reconstruction of the specific semiconductor substrate on which the Fe film is deposited. These results suggest that, by controlling surface reconstruction of the substrate during the MBE growth, one may be able to engineer the magnetic anisotropy in Fe, and possibly also in other MBE-grown ferromagnetic films.

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Section: Magnetization Measurementsmentioning

confidence: 99%

Magnetic anisotropy in ultrathin Fe films on GaAs, ZnSe, and Ge (001) substrates

Tivakornsasithorn

Liu

et al. 2014

Journal of Applied Physics

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“…This indicates that the main origin of the observed PMA is the preservation of the As-free surface during the growth of the film, which produces sufficient surface magnetic anisotropy to support PMA. Moreover, the chemical and structural disorder in the interface possibly due to residual interfacial reaction and low-temperature growth may lower in-plane magnetic anisotropy 27 and help to observe PMA for the present system.…”

Section: Discussionmentioning

confidence: 87%

Magnetism of pristine Fe films on GaAs(100)

et al. 2007

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We grew Fe films on GaAs͑100͒ at ϳ80 K to suppress interface alloying and As outdiffusion, and obtained kinetically stabilized, pristine Fe films. We studied their magnetic properties using both x-ray magnetic circular dichroism and the magneto-optic Kerr effect. The salient magnetic features are as follows. A 2.1-ML-thick Fe film is already ferromagnetic and exhibits perpendicular magnetic anisotropy ͑PMA͒. Moreover, a spin reorientation transition occurs in films with ϳ2.8 monolayer thickness. The PMA is attributable to preservation of the surface magnetic anisotropy by suppressing the As outdiffusion during the low-temperature growth of the Fe film. The PMA is associated with the enhancement of the orbital moment by only ϳ50% in contrast to values reported in some previous studies.

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“…This contribution is induced at the ZnSe/Fe interface and has been previously reported for ZnSe/Fe and GaAs/Fe structures 27,28 . This anisotropy has not been observed in the iron thicker layer, probably, due to the fact that the anisotropy scales with 1/t and thus it is negligible for the top layer.…”

Section: Fmr Parameters Of the Fe Layersmentioning

confidence: 90%