Structural and electronic properties of Li- and Cu-doped β-rhombohedral boron constructed from icosahedral and truncated icosahedral clusters

Matsuda, Hirofumi; Nakayama, Takahiro; Kimura, Kaoru; Murakami, Youichi; Suematsu, Hiroyoshi; Kobayashi, Megumi; Higashi, Iwami

doi:10.1103/physrevb.52.6102

Cited by 72 publications

(40 citation statements)

References 26 publications

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“…Of further importance, there is a problem of the controllability of electronic carriers for β -boron. A lot of attempts for achieving metallic conductivity for boron have been made for β -boron [18,19,30], but have not been succeeded. A big problem for achieving this is thought to be gap states due to the disorder intrinsic to β phase [20].…”

Section: Introductionmentioning

confidence: 99%

High‐pressure properties and phase diagram of boron

Shirai

Masago

Katayama‐Yoshida

2006

Physica Status Solidi (b)

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Section: Introductionmentioning

confidence: 99%

High‐pressure properties and phase diagram of boron

Shirai

Masago

Katayama‐Yoshida

2006

Physica Status Solidi (b)

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“…Although transition metal doping of β-rhombohedral boron has been heavily investigated [1][2][3][4][5], the doping of semiconducting boron carbides has been driven largely by device applications. The ability to generate semiconducting grades of boron carbide by plasma enhanced chemical vapour deposition (PECVD) of carboranes permits the development of corrosion resistant, high temperature devices with many applications including neutron detection [6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

The local structure of transition metal doped semiconducting boron carbides

Liu

Luo

Mei

et al. 2010

J. Phys. D: Appl. Phys.

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Brand, Jennifer I.; and Dowben, Peter A., "The local structure of transition metal doped semiconducting boron carbides" (2010 Abstract Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orthocarborane (closo-1,2-C 2 B 10 H 12 ) and 3d metal metallocenes were investigated by performing K-edge extended x-ray absorption fine structure and x-ray absorption near edge structure measurements. The 3d transition metal atom occupies one of the icosahedral boron or carbon atomic sites within the icosahedral cage. Good agreement was obtained between experiment and models for Mn, Fe and Co doping, based on the model structures of two adjoined vertex sharing carborane cages, each containing a transition metal. The local spin configurations of all the 3d transition metal doped boron carbides, Ti through Cu, are compared using cluster and/or icosahedral chain calculations, where the latter have periodic boundary conditions.

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“…According to Werheit's evaluation of the density of states (DOS) of the acceptor levels from optical absorption experiments, the DOS is very high (10-10 cm\) (1). Electrical conductivity experiments show hopping type conduction over a wide range of temperature ((250 K) (4,5). In this temperature range, most of the carriers contributing to current are populated in the acceptor levels, rather than in the conduction or valence band.…”

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confidence: 97%