2020
DOI: 10.1016/j.matpr.2020.05.598
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Structural and electronic properties of zinc antimonide ZnSb

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Cited by 5 publications
(6 citation statements)
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“…From our results of the plasma frequency ωp and the static dielectric function 𝜀𝜀1 (0), E0 equal 0.59 eV, 0.74 eV and 0.76 eV respectively for E//x, E//y and E//z. The band gap obtained along x axis is in a good agreement with the band gap value of 0.59 eV obtained by band structure [11].…”
Section: Resultssupporting
confidence: 87%
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“…From our results of the plasma frequency ωp and the static dielectric function 𝜀𝜀1 (0), E0 equal 0.59 eV, 0.74 eV and 0.76 eV respectively for E//x, E//y and E//z. The band gap obtained along x axis is in a good agreement with the band gap value of 0.59 eV obtained by band structure [11].…”
Section: Resultssupporting
confidence: 87%
“…Very recently, we have reported the structural and electronic properties of bulk-ZnSb [11]. We have found, using Generalized Gradient Approximation plus modified Becke-Johnson exchange potential (GGA+mBJ), that this material is a semiconductor with indirect gap 0.59 eV.…”
Section: Introductionmentioning
confidence: 99%
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“…5b, consistent with previous reports. 72 Hence, Zn vacancies provide additional carriers and increase the electrical conductivity of ZnSb, supporting the experimental σ vs. T curve.…”
Section: Resultssupporting
confidence: 70%
“…A good thermoelectric material should have a high power factor (S 2 σ) and low thermal conductivity (κ) [4]- [6]. Several theoretical and experimental studies have been carried out on zinc antimonide (ZnSb) [1], [7]- [14] due to its multiple uses. Recently, we have calculated its structural and electronic properties using the modified Becke-Johnson with the Generalized Gradient approximation (mBJ-GGA).…”
Section: Introductionmentioning
confidence: 99%