Structural and electronic properties of PdS 2 nanoribbons

Gan, Yan; Quhe, Ruge; Wu, Liyuan; Hou, Siyao; Bi, Jingyun; Liu, Gang; Lu, Pengfei

doi:10.1016/j.jmmm.2018.03.044

Cited by 11 publications

(7 citation statements)

References 30 publications

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“…The armchair NRBs are semiconducting as that of bulk, whereas zigzag NRBs exhibit a metallic property; thus, by controlling the edge structures saturated with H atoms, their conductivity can be tuned to either semiconducting (n- or p-type) or half metallic . Similar observations regarding the edge-dependent property have also been reported for PdS 2 NRBs …”

Section: Structures and Propertiessupporting

confidence: 69%

“…205 Similar observations regarding the edge-dependent property have also been reported for PdS 2 NRBs. 206 For 2D TMDCs, the ligand field splitting of the nonbonding metal d-orbitals under the chalcogen coordination environment (e.g., trigonal prismatic) leads to the formation of the band gap. 207 As a semiconductor, the thermodynamically stable 2H phase of the 2D TMDCs exhibits an intrinsic band gap ranging from visible to near-IR frequencies, and shows distinct excitonic absorption and emission features.…”

Section: Semiconducting and Optical Propertiesmentioning

confidence: 99%

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Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

2023

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The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

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Section: Structures and Propertiessupporting

confidence: 69%

Section: Semiconducting and Optical Propertiesmentioning

confidence: 99%

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

2023

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“…As an emerging member of the TMD family, nTMDs can be denoted MX 2 , where M represents Pd and Pt; X represents S, Se, and Te, respectively. It is predicted by theoretical studies that nTMDs exhibit different electronic properties compared with the famous 2D materials of MoS 2 and WSe 2 . − For example, a monolayer (ML) nTMDs is an indirect band-gap semiconductor and has a greater elastic modulus. As a typical group-10 nTMD, a monolayer of PdS 2 contains three atomic layers, which have a sandwich structure of S-Pd-S layers.…”

Section: Introductionmentioning

confidence: 99%

Centimeter-Scale Few-Layer PdS₂: Fabrication and Physical Properties

Zhang

et al. 2021

ACS Appl. Mater. Interfaces

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To develop next-generation electronic devices, novel semiconductive materials are urgently required. The transition metal dichalcogenides (TMDs) hold the promise of next generation of semiconductor materials for emerging electronic applications. As a member of the group-10 TMDs, PdS2 has a notable layer-number-dependent band structure and tremendously high carrier mobility at room temperature. Here, we demonstrate the experimental realization of centimeter-scale synthesis of the few-layer PdS2 by the combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. For the first time, the optical anisotropic properties of the few-layer PdS2 were investigated through angle-resolved polarized Raman spectroscopy. Also, the evolution of Raman spectra was studied depending on the temperature in the range of 12–300 K. To further understand the electronic properties of the few-layer PdS2, the field-effect transistor (FET) devices were fabricated and investigated. The electronic measurements of such FET devices reveal that the PdS2 materials exhibit a tunable ambipolar transport mechanism with field-effect mobility of up to ∼388 cm2 V–1 s–1 and the on/off ratio of ∼800, which were not reported before in the literature. To well understand the experimental results, the electronic structure of PdS2 was determined using density functional theory (DFT) calculations. These excellent physical properties are very helpful in developing high-performance opto-electronic applications.

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“…This structure has different electric properties in nanoribbon mode compared with the bulk mode, so that exhibits a metal-like behavior in zigzag edge shape and semiconductor behavior in armchair one. Although there are extensive research articles on Pd 2 S 4 in the fields of electronics and magnetism, they have not considered properly the doping of Pd 2 S 4 45 – 48 .…”

Section: Introductionmentioning

confidence: 99%

Effects of 3d transition metal impurities and vacancy defects on electronic and magnetic properties of pentagonal Pd2S4: competition between exchange splitting and crystal fields

Gholami

Golsanamlou

Soleimani

2022

Sci Rep

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In this paper, we first investigate the electronic properties of the two-dimensional structure of dichalcogenide Pd2S4. These properties strongly depend on the crystal field splitting which can change by atomic vacancies (S and Pd vacancies). The main purpose of the present paper is to create remarkable magnetic properties in the system by adding 3d transition metal atoms where the presence of Mn, Cr, and Fe creates the exchange interaction in the system as well as change in the crystal field. The created magnetic properties strongly depend on the competition between exchange interaction and crystal field to separate the levels of d orbitals. In addition, the presence of the transition metals in the structures with S and Pd vacancy has been investigated carefully. The calculations demonstrate that we can achieve an extensive range of magnetic moment up to 3.131 $${\mu }_{B}$$ μ B . The maximum one is obtained in the presence of Mn and absence of sulfur while some of the doped structures does not have magnetic moment. Our results show that Pd vacancy in the presence of Cr, Mn and Fe metals increases the magnetic property of the Pd2S4 structure. The extensiveness and variety of the obtained properties can be used for different magnetic and non-magnetic applications.

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Structural and electronic properties of PdS 2 nanoribbons

Cited by 11 publications

References 30 publications

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

Centimeter-Scale Few-Layer PdS₂: Fabrication and Physical Properties

Effects of 3d transition metal impurities and vacancy defects on electronic and magnetic properties of pentagonal Pd2S4: competition between exchange splitting and crystal fields

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Structural and electronic properties of PdS 2 nanoribbons

Cited by 11 publications

References 30 publications

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

Centimeter-Scale Few-Layer PdS2: Fabrication and Physical Properties

Effects of 3d transition metal impurities and vacancy defects on electronic and magnetic properties of pentagonal Pd2S4: competition between exchange splitting and crystal fields

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Product

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Centimeter-Scale Few-Layer PdS₂: Fabrication and Physical Properties