2011
DOI: 10.1016/j.egypro.2011.10.165
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Structural and electronic properties of ZnO nanowires: a theoretical study

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Cited by 29 publications
(22 citation statements)
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“…The insertion of a dopant in the structure of the zinc oxide did not promote significant changes in the E gap values of the materials, which is possibly due to the low concentrations of the doped ions Gd 3+ inserted in the crystalline lattice of ZnO. But also, the estimated E gap experimental values were close to the theoretical E gap value of ZnO (3.37 eV) [75,76]. Photoluminescence spectra obtained at room temperature for samples of pure ZnO and doped with the Gd 3+ ions synthesized at 16 min are shown in Fig.…”
Section: Resultsmentioning
confidence: 56%
“…The insertion of a dopant in the structure of the zinc oxide did not promote significant changes in the E gap values of the materials, which is possibly due to the low concentrations of the doped ions Gd 3+ inserted in the crystalline lattice of ZnO. But also, the estimated E gap experimental values were close to the theoretical E gap value of ZnO (3.37 eV) [75,76]. Photoluminescence spectra obtained at room temperature for samples of pure ZnO and doped with the Gd 3+ ions synthesized at 16 min are shown in Fig.…”
Section: Resultsmentioning
confidence: 56%
“…Рiзноманiття цiкавих фiзичних i хiмiчних властивостей, таких, як анiзотропна кристалiчна структура, наявнiсть напiвпровiдникових властивостей за великої ширини забороненої зони, висока енерґiя зв'язку екситонiв, висока чутливiсть поверхневої провiдностi до наявностi адсорбатiв, амфотернi хiмiчнi властивостi тощо роблять цей матерiал справдi унiкальним [1][2][3][4]. Багато дослiдницьких груп у свiтi зосередились на вивченнi структури, процесах формування, властивостей та поведiнки наночастинок [5][6][7], нанотрубок [8,9], нанодротин тощо на основi ZnO [10,11]. Наноструктури на основi оксиду цинку є кандидатами для виготовлення надтонких дисплеїв, УФ-випромiнювачiв i перемикачiв та газових сенсорiв [12][13][14].…”
Section: оксид цинкуunclassified
“…33 For bulk ZnO, the lattice parameters calculated with the DFT are in good agreement with the experimental data. 34,35 However, due to local density approximations to the exchange-correlation (XC) effects included in the standard DFT, the GGA type functionals lead to severely underestimated electronic band gaps. ZnO has a direct band gap of about 3.4 eV 36,37 whereas GGA-DFT calculations reported a value of about 0.74 eV.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO has a direct band gap of about 3.4 eV 36,37 whereas GGA-DFT calculations reported a value of about 0.74 eV. 12,34 In addition, the position and nature of probable energy levels in the band gap of ZnO associated with various types of defects and impurities can not be correctly predicted by the standard XC functionals. Therefore, hybrid DFT methods, which partially incorporate exact exchange, can be used to overcome these issues.…”
Section: Introductionmentioning
confidence: 99%