Structural and electron diffraction data for sapphire (α‐al<sub>2</sub>o<sub>3</sub>)

Lee, W. E.; Lagerlöf, K.P.D.

doi:10.1002/jemt.1060020309

Cited by 223 publications

(98 citation statements)

References 12 publications

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“…Therefore, the structure can be presented as an ABCABC close packed stacking of O 2À layers along the [1 1 1] direction, with cations randomly and partially occupying the interstitial sites [7,8]. In contrast, a-Al 2 O 3 has a rhombohedral lattice in which O 2À anions are hexagonal closed packed, while Al 3+ cations occupy two-thirds of the octahedral interstitial sites [28]. This structure can be viewed as ABABAB closed packed stacking of O 2À layers along the [0 0 0 1] direction, with cations orderly distributed in the interstitial sites.…”

Section: Partial Dislocation Mechanism Of the Martensitic Transformationmentioning

confidence: 99%

α- to γ-Al2O3 martensitic transformation induced by pulsed laser irradiation

Yan

Sui

2010

Acta Materialia

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Section: Partial Dislocation Mechanism Of the Martensitic Transformationmentioning

confidence: 99%

α- to γ-Al2O3 martensitic transformation induced by pulsed laser irradiation

Yan

Sui

2010

Acta Materialia

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“…6a except for the ±(0003) reflections, which are missing in the virtual diffraction patterns. The ±(0003) reflections are missing in the virtual diffraction peaks because they are the result of double diffraction, which is not captured by kinematic diffraction theory [47]. Fig.…”

Section: Resultsmentioning

confidence: 97%

Bridging atomistic simulations and experiments via virtual diffraction: understanding homophase grain boundary and heterophase interface structures

et al. 2015

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Virtual diffraction is a computational technique that enables a synergistic coupling between experiments and atomistic simulations, which can help to elucidate nanoscale structure-property relationships. The research objective herein is to highlight recent advances in the use of virtual diffraction as a method to study the geometry and structure of homophase grain boundaries and heterophase interfaces with direct experimental validation. Virtual selected area diffraction patterns for two types of boundaries-homophase Al twist grain boundaries and heterophase Al 2 O 3 /Al interfaces-are created without a priori assumption of the periodic interface structure by computing diffraction intensities across high-resolution, 3-D reciprocal space meshes. In this work, computed diffraction patterns clearly identify Al grain boundary misorientation angles, reveal subsidiary peaks created by the dislocation arrays within select Al grain boundaries, and allow experimental validation of the minimum energy orientation relationship for the Al 2 O 3 /Al interface. Due to its advanced implementation, virtual diffraction characterization used throughout this work can be easily extended providing routes for similar analysis and experimental validation of atomistic simulations.

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“…SEM and AFM characterizations.-The morphology of PSS samples was characterized with a field emission SEM (FESEM, Zeiss Supra 55). The topography of PSS samples was characterized with an AFM system (Bruker MultiMode 8) at ambient conditions (25 • C, 35-40% RH). Please refer to Part I for the details of SEM and AFM characterizations for PSS samples.…”

Section: Methodsmentioning

confidence: 99%

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H₂SO₄and H₃PO₄Mixture at Various Temperatures

Shen

Zhang

Wang

et al. 2017

ECS J. Solid State Sci. Technol.

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The effect of etching temperature (473-543 K) on the crystallographic and topographical evolutions as well as the etching rate of crystallographic planes of cone-shaped patterned sapphire substrate (PSS) etched in both H 2 SO 4 -based (H 2 SO 4 :H 3 PO 4 = 5:1 at volume ratio) and H 3 PO 4 etchants was systematically studied. For H 2 SO 4 -based etchant, higher temperature favors larger etching rate ratio of slant planes (S 1 {11 0 5}, S 3 {45 1 38}, S 4 {11 0 12}, and S 5 {1 1 0 37} planes) to c-plane, thus leading to smaller filling factor (FF) of patterns; the Arrhenius activation energy (E a ) of etching reactions for various crystallographic planes follows the order: E a (c) < E a (S 1 ) < E a (S 3 ) < E a (S 4 ). For H 3 PO 4 , higher temperature favors smaller etching rate ratio of slant planes (S 1 {11 0 5} and S 6 {11 0 8} planes) to c-plane and larger FF of patterns; the E a follows the order: E a (S 1 ) < E a (S 6 ) < E a (c). This work will contribute to elucidating the etching mechanism and fabricating optimized PSS for enhanced performance of light emitting diodes.

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Structural and electron diffraction data for sapphire (α‐al₂o₃)

Cited by 223 publications

References 12 publications

α- to γ-Al2O3 martensitic transformation induced by pulsed laser irradiation

α- to γ-Al2O3 martensitic transformation induced by pulsed laser irradiation

Bridging atomistic simulations and experiments via virtual diffraction: understanding homophase grain boundary and heterophase interface structures

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H₂SO₄and H₃PO₄Mixture at Various Temperatures

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Structural and electron diffraction data for sapphire (α‐al2o3)

Cited by 223 publications

References 12 publications

α- to γ-Al2O3 martensitic transformation induced by pulsed laser irradiation

α- to γ-Al2O3 martensitic transformation induced by pulsed laser irradiation

Bridging atomistic simulations and experiments via virtual diffraction: understanding homophase grain boundary and heterophase interface structures

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture at Various Temperatures

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Structural and electron diffraction data for sapphire (α‐al₂o₃)

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H₂SO₄and H₃PO₄Mixture at Various Temperatures