Structural and electrical transport properties of (La0.7-Y )Ca0.3MnO3 manganites

Structural, magnetic, electrical and dielectric properties of Pr0.8Na0.2MnO3 manganite

“…For the doped perovskite manganite, it is found that the activation energy values depend on the dopant element concentration and related to the temperature range. The inferred activation energy value agrees with previous work 45,46 for similar manganite materials. Recently, 46 it is found that E a varies from 110 meV to 165 meV as function of the dopant element concentration which is related to the localization and delocalization effects.…”

Interface based field effect configuration and charge conduction mechanisms for manganite thin film heterostructures

“…It is a well known fact that parameter n strongly depends on various external parameters including ionic doping percentage, structural parameters, magnetic nature of the lattice, film thickness, nature of defects existing, interface nature in the devices, externally applied magnetic field, form of the samples under study, externally applied electric field, etc. 31–33,53–59 One magnon scattering processes can be expected for n ∼2.5 and ∼3.0, two magnon scattering processes can be correlated with the values of n ∼4.5 and ∼7.5 and intermediate scattering processes can also be predicted if n is found to be ∼5.5 and 6.5. 31–33 A few reports also deal with the higher order spin fluctuations within the lattice where n is found to be higher than 7.5.…”

“…To understand the charge-lattice or spin-lattice interactions as well as electron-magnon scattering processes that exist across the LMO/LCMO interface grown using the CSD method (CSD method and PLD technique based comparison has been done for LMO/LCMO interface based resistivity behaviors only, other investigations are limited to the chemically grown LMO/ LCMO interface within the scope of the present report), temperature dependent resistivity data have been fitted theoretically using the ZDE polynomial law: r(T) = r 0 + r 2 T 2 + r n T n , where r 0 is the studied lower temperature resistivity (in the present case, r 0 represents the resistivity values recorded at 200 K), r 2 is the resistivity contributed through existing electronelectron, electron-phonon, and electron-magnon scattering processes, r n is the corresponding resistivity coefficient and n is the ZDE polynomial law parameter. [53][54][55][56][57][58][59] In the present case, it is necessary to point out that r 2 is the resistivity contributed by three major scattering processes, namely, electron-electron, electron-phonon and electron-magnon. However, at higher temperatures (i.e.…”

“…It is a well known fact that parameter n strongly depends on various external parameters including ionic doping percentage, structural parameters, magnetic nature of the lattice, film thickness, nature of defects existing, interface nature in the devices, externally applied magnetic field, form of the samples under study, externally applied electric field, etc. [31][32][33][53][54][55][56][57][58][59] One magnon scattering processes can be expected for n B2.5 and Table 1 Values of fitting parameters including r 0 , r 2 , r n and exponent n (with obtained errors for r 0 and power exponent n) along with values of goodness of fit parameter w 2 obtained by fitting the ZDE polynomial law r(T) = r 0 + r 2 T 2 + r n T n to the temperature dependent LMO/LCMO interface resistivity recorded under a zero interface electric field and applied negative and positive interface electric fields across the same LMO/LCMO interface of the LMO/LCMO/LAO structure (please refer the text for clarification of fitting parameters of the ZDE polynomial law) B3.0, two magnon scattering processes can be correlated with the values of n B4.5 and B7.5 and intermediate scattering processes can also be predicted if n is found to be B5.5 and 6.5. [31][32][33] A few reports also deal with the higher order spin fluctuations within the lattice where n is found to be higher than 7.5.…”

Influence of Ruthenium Doping on the Crystal Structure and Magnetic Properties of Pr0.67Ba0.33Mn1–xRuxO3 Manganites

“…Partial substitution at the Mn site alters the local magnetic coupling between the magnetic moments of the substituents and the Mn ions. Most of the doping on the Mn site decreases with the transition temperature due to weakening of the double exchange interaction [6,7].…”