Structural and electrical study of highly (100)-oriented KNN films fabricated by a sol-gel non-alkoxide process

Zhang, Wei; Zhu, Haiyong; Zhang, Xuehua; Wu, Hao; Bao, Jianqiu; Hu, Fangren

doi:10.1016/j.ceramint.2019.07.234

Cited by 16 publications

(6 citation statements)

References 34 publications

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“…We have previously reported on KNN films with (100) texture using (100) oriented single crystal STO substrates and the same precursor solution as used in this work 56 . Promoting texture in KNN films on SiPt substrates has also been reported for both 2- Please do not adjust margins Please do not adjust margins methoxyethanol-and water-based CSD syntheses by tuning the processing temperature or atmosphere 34,57 .…”

Section: Discussionmentioning

confidence: 62%

“…In only a few studies other solvents have been used, e.g. propionic acid 50 , ethanol 51 , water [52][53][54][55][56][57] and other 58,59 . Due to low cost and the ubiquity of Si in electronics, platinized silicon (SiPt, Pt/TiO2/SiO2/Si) is by far the most used substrate in ferroelectric oxide thin film CSD synthesis 17 .…”

Section: Introductionmentioning

confidence: 99%

“…Due to low cost and the ubiquity of Si in electronics, platinized silicon (SiPt, Pt/TiO2/SiO2/Si) is by far the most used substrate in ferroelectric oxide thin film CSD synthesis 17 . KNN thin film synthesis is no exception, and the majority of studies of KNN thin films are based on using SiPt substrates [19][20][21][22][23][24][28][29][30][31][32][33][34][35][36][40][41][42][43][46][47][48]52,53 , while a few other studies are reported using other substrates like SiO2/Si 38,58,59 , ZrO2/Si 44,45 , LaNiO3/Si 57 , Pt/MgO 39 , Pt/Al2O3 49,58 , metals 50,51,54 and SrTiO3 (STO) 18,[25][26][27]37,55,56 .…”

Section: Introductionmentioning

confidence: 99%

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Ferroelectric and dielectric properties of Ca²⁺-doped and Ca²⁺–Ti⁴⁺co-doped K_0.5Na_0.5NbO₃thin films

et al. 2020

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Section: Discussionmentioning

confidence: 62%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ferroelectric and dielectric properties of Ca²⁺-doped and Ca²⁺–Ti⁴⁺co-doped K_0.5Na_0.5NbO₃thin films

et al. 2020

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“…Different thickness of the film affects the microscopic grain and electrical properties of the films at the same preparation conditions. As shown in Figure 3b-e, [108] the KNN films have 6, 10, 14, and 18 layers, respectively. All four films maintain the same growth conditions except for the different number of layers.…”

Section: Sol-gelmentioning

confidence: 89%

Perovskite Oxide Ferroelectric Thin Films

Tian

Yang

2022

Adv Elect Materials

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be roughly divided into perovskite-type, lithium niobate type, tungsten bronze type, potassium dihydrogen phosphate type, triglycine sulphate type, Rochelle salt, ferroelectric liquid crystal, and ferroelectric polymer. Among these ferroelectric thin film materials, perovskite ferroelectric films and ferroelectric polymer films are relatively well-studied films. The outstanding ductility and flexibility of ferroelectric polymer films like polyvinylidene fluoride (PVDF) have made them popular in flexible electrical devices. [7][8][9] However, some disadvantages of ferroelectric polymer films, such as low polarization strength, large coercive field, slow switching speed, and poor temperature resistance limit their application in fields including ferroelectric memory, piezoelectric energy harvesting or sensors. [10][11][12] To apply them to these fields, they need to be appropriately combined with perovskite oxide materials to improve their ferroelectric properties. For example, some researchers doped 0.5((Ba 0.7 Ca 0.3 )TiO 3 )-0.5(Ba(Zr 0.2 Ti 0.8 ) O 3 ) (BCZT) ceramic particles into PVDF to make BCZT/PVDF composite film. PVDF is a semicrystalline ferroelectric polymer, doping it with BCZT improves its crystallinity and hence its dielectric constant. The dielectric constants of the γ-PVDF phase and α-PVDF phase in pure PVDF films are ≈10 and 7.5. After doping with BCZT, the dielectric constants increase to 31 and 20, which improves the ferroelectric properties of PVDF. [13] There are many other examples of enhancing the ferroelectric properties of PVDF films by doping with perovskite oxides. [14][15][16][17][18][19][20] Obviously, enhancing the ferroelectric properties of PVDF by this method will make the preparation process relatively tedious and is not conducive to mass production. It is not as convenient as growing perovskite ferroelectric films directly on flexible substrates. In addition, polymers' poor temperature resistance limits their utilization compared to ferroelectric oxide thin film materials' superior temperature resistance and physical properties. The composite dielectric film composed of BiFeO 3 (BFO) and SrTiO 3 (STO) has a reversible energy storage density (U e ) of about 70 J cm −3 at room temperature and can operate stably between −60 and 100 °C. [21] BaZr 0.35 Ti 0.65 O 3 (BZT) has a U e of 78.7 J cm −3 at room temperature and can work stably between −150 and 200 °C, and the U e still exceeds 40 J cm −3 at 200 °C. [22] But polymer-based ferroelectric materials often cannot be applied at high temperatures and have a low energy storage density (<40 J cm −3 ). [23,24] The high temperature special design can meet the temperature requirements, but the dielectric properties need more optimization. [25,26] The spontaneous polarization of BaTiO 3 (BTO) is about 25 µC cm −2 , [27] and the spontaneous polarization of stress-modulated BTO Perovskite oxide thin film materials are used in various fields of human life due to their excellent physical properties. The high performance thin films in turn prov...

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“…They also exhibit robust and diverse flexibility and good electrical and thermal conductivity. Therefore, direct deposition of the thin films on the flexible metallic foils with the properly designed thermal process by sol–gel deposition should be one of the most feasible methods in the fabrication of flexible piezoelectric thin films, together with the advantages in large-area manufacturing and composition homogeneity of the sol–gel deposition technique. , …”

Section: Introductionmentioning

confidence: 99%

All-Inorganic Flexible (K, Na)NbO₃-Based Lead-Free Piezoelectric Thin Films Spin-Coated on Metallic Foils

Cheng

Huang

et al. 2021

ACS Appl. Mater. Interfaces

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Flexible piezoelectric thin films are raising interest in energy harvesting and wearable electronics, although their direct fabrication is challenging in the selection of substrates and thermal processing. In this work, we developed direct fabrication of flexible lead-free (K, Na)NbO 3 (KNN)-based piezoelectric films on commercially available metallic foils by sol−gel processing. Stainless steel and platinum foils are selected as flexible substrates because of their good thermal stability, robust flexibility, and cost-efficiency. The sol−gel-processed KNN-based thin films on both of the metallic foils show good flexibility, with the bending radii reaching ±3 mm. The flexible thin films grown on stainless steel and platinum foils present high breakdown electric fields that reach 1760 and 2530 kV/cm, respectively, resulting from the fine-grained dense structure, limited leakage current density, and suppressed mobility of charged carriers. Improved effective piezoelectric coefficient d 33, eff * (75.4 pm/V) with a slight decrease after bending was obtained in the flexible thin films on Pt when compared to their rigid counterparts. The flexible lead-free piezoelectric thin films with combined high breakdown electric fields and piezoelectric and energy storage properties may pave the way for integrating KNN-based multifunctional thin films into flexible electronics.

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Structural and electrical study of highly (100)-oriented KNN films fabricated by a sol-gel non-alkoxide process

Cited by 16 publications

References 34 publications

Ferroelectric and dielectric properties of Ca²⁺-doped and Ca²⁺–Ti⁴⁺co-doped K_0.5Na_0.5NbO₃thin films

Ferroelectric and dielectric properties of Ca²⁺-doped and Ca²⁺–Ti⁴⁺co-doped K_0.5Na_0.5NbO₃thin films

Perovskite Oxide Ferroelectric Thin Films

All-Inorganic Flexible (K, Na)NbO₃-Based Lead-Free Piezoelectric Thin Films Spin-Coated on Metallic Foils

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Structural and electrical study of highly (100)-oriented KNN films fabricated by a sol-gel non-alkoxide process

Cited by 16 publications

References 34 publications

Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+co-doped K0.5Na0.5NbO3thin films

Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+co-doped K0.5Na0.5NbO3thin films

Perovskite Oxide Ferroelectric Thin Films

All-Inorganic Flexible (K, Na)NbO3-Based Lead-Free Piezoelectric Thin Films Spin-Coated on Metallic Foils

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Ferroelectric and dielectric properties of Ca²⁺-doped and Ca²⁺–Ti⁴⁺co-doped K_0.5Na_0.5NbO₃thin films

Ferroelectric and dielectric properties of Ca²⁺-doped and Ca²⁺–Ti⁴⁺co-doped K_0.5Na_0.5NbO₃thin films

All-Inorganic Flexible (K, Na)NbO₃-Based Lead-Free Piezoelectric Thin Films Spin-Coated on Metallic Foils