Structural and electrical resistivity characteristics of vacuum arc ion deposited zirconium nitride thin films

Influence of Nitrogen Vacancy Concentration on Mechanical and Electrical Properties of Rocksalt Zirconium Nitride Films

“…For instance, Abdallah et al [10] reported that the maximal hardness was obtained at V N concentration of 9% and Huang et al [11] got the maximal hardness at V N concentration of 20%. Similarly, the resistivity of ZrN x film was also reported to reach its bottom at the specific substoichiometric point such as V N concentration of 21% by Khan et al [12]. However, the unusual mechanical and electrical properties behaviors were often attributed to the influence of conventional microstructural features, such as preferred orientation, residual stress and grain size [10][11][12].…”

Structure and characteristics of reactive magnetron sputtered (CrTaTiVZr)N coatings

“…For example, Lee et al [26] and Kobayashi and Doi [27] observed a change from (002) into (111) and then into (220) with increasing bias voltage. Similarly, Pastalas et al [28] and Khan et al [29] reported a change from (002) to (111).…”

Carbon ions irradiation induced modifications in structural and electrical resistivity characteristics of ZrN thin films

“…5. The as-grown films spectrum indicates a broad band centered at 689 cm À 1 corresponding to stretching vibrations of Zr-N simple bonds [7,13]. The spectrum also depicts a band for ZrO 2 at 1040 cm À 1 , which appears due to thin oxide layer formed on ZrN surface.…”

“…The details of the synthesis chamber and fabrication method are reported elsewhere [7]. The as-grown ZrN films were irradiated with C ions beam in a 5UDH-Pelletron accelerator.…”