Structural and electrical properties of Germanium-doped Sb70Te30 eutectic thin films

Prokhorov, E.; González‐Hernández, J.; Mendoza-Galván, A.; Trápaga, G.; Luna‐Bárcenas, Gabriel

doi:10.1016/j.jnoncrysol.2009.05.072

Cited by 6 publications

(2 citation statements)

References 19 publications

(40 reference statements)

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“…We notice that onset and peak temperatures increase with tin or silver content. Similar behaviors are reported when a third element (Al, Ag, Cr, Cu, Ga, Ge, In, Mg, Ru, Si, Ti, W, Zn, Zr) is added to Sb 67 + y Te 33−y (0 ≤ y ≤ 13) [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][33][34][35][36]. In particular, Hsu et al [13] found that crystallization temperatures for Sb 69.9 Te 30.…”

Section: Resultssupporting

confidence: 63%

“…The addition of a third element to the binary composition produces an increase in the value of the activation energy for crystallization. This fact was widely observed in other cases [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][33][34][35][36]. In particular, Hsu et al [13] found that the activation energies for the crystallization of Sb 69.9 Te The range for the T p /T m ratio is between 0.51 and 0.…”

Section: Resultsmentioning

confidence: 67%

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Thermal Analysis and Crystallization of MY(Sb70Te30)100-Y (M = Ag, Sn; Y = 0, 7.5) Amorphous Thin Films

Rocca,

Ureña,

Fontana

2023

Preprint

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Antimony-telluride based phase-change materials doped with different metals have been proposed to be ideal materials for improving the performance of phase-change memories. It is well known that Sb70Te30 thin films show a sharp fall in the electrical resistance in a narrow temperature range when heating. Therefore, it is interesting to study the effect of adding metallic atoms into this composition. In this work, the crystallization of My(Sb0.70Te0.30)100-y (M = Ag, Sn; y = 0, 7.5) amorphous thin films, obtained by pulsed laser deposition, has been studied by means of differential scanning calorimetry under continuous heating regime. The as-deposited samples and the crystallization products have been characterized by X-ray diffraction. The crystallization and melting temperatures were determined, as well as the enthalpies involved in such processes. The activation energy for crystallization was also determined. From the obtained results, it is observed that the addition of metals shifts the crystallization process to higher temperatures around 15-25 K and increases its activation energy. The transformation diagrams (Temperature-Time-Transformation and Temperature-Heating rate-Transformation) are calculated. The experimental results are discussed and correlated with proposed structures for the glass and the crystalline states. The present results are also compared with those reported by other authors.

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Section: Resultssupporting

confidence: 63%

Section: Resultsmentioning

confidence: 67%

Thermal Analysis and Crystallization of MY(Sb70Te30)100-Y (M = Ag, Sn; Y = 0, 7.5) Amorphous Thin Films

Rocca,

Ureña,

Fontana

2023

Preprint

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Fast and scalable memory characteristics of Ge‐doped SbTe phase change materials

Cheong

Lee

Jeong

et al. 2012

Physica Status Solidi (b)

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Phase change memory (PCM) has opportunities of various applications on the premise of its high performance operations, which are still to develop with innovations such as change of a memory material. In respects of high‐speed and high‐scalability memory characteristics, δ‐phase Ge‐doped SbTe (GeST) materials stand as highly promising candidates. An overview of the material and device characteristics of these materials is presented primarily based on our recent experimental and computational studies and with a particular regard to their Sb‐to‐Te ratio (STR) dependence.TEM images of the δ‐phase GeST microstructures of varying STR and a highly scaled PCM cell with a δ‐phase GeST of high STR. magnified image

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Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb70Te30 doped with Sn

Bilovol

Fontana

Rocca

et al. 2020

Journal of Alloys and Compounds

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Structural and electrical properties of Germanium-doped Sb70Te30 eutectic thin films

Cited by 6 publications

References 19 publications

Thermal Analysis and Crystallization of MY(Sb70Te30)100-Y (M = Ag, Sn; Y = 0, 7.5) Amorphous Thin Films

Thermal Analysis and Crystallization of MY(Sb70Te30)100-Y (M = Ag, Sn; Y = 0, 7.5) Amorphous Thin Films

Fast and scalable memory characteristics of Ge‐doped SbTe phase change materials

Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb70Te30 doped with Sn

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