Structural and electrical properties of Nb-doped TiO 2 films sputtered with plasma emission control

Effect of micromorphology on transport properties of Nb‐doped anatase TiO2 films: A transmission electron microscopy study

“…It should be stressed that the Lo-p w film exhibited a rather homogeneous micromorphology and an even higher m H of 9.2 cm 2 V À1 s À1 than those of the PLD films. The obtained r value (5.8 Â 10 À4 Vcm) for the Lo-p w film is one of the best among the literature values for the TNO films prepared by RF, DC, and pulsed-DC sputtering [7][8][9][10][11][12][13][14][15][16][17][18][19], and is approximately half of those reported for the TNO films by chemical vapor deposition [33] and atomic layer deposition [31,34], $1 Â 10 À3 Vcm. These results indicate that careful selection of p w is of particular importance to obtain high quality sputtered TNO films suitable for transparent electrodes.…”

“…Nb‐doped anatase TiO 2 (TNO) is a newly developed TCO with unique properties, such as excellent chemical stability , high refractive index , and wide conductivity range . Since the discovery of TNO grown by pulsed laser deposition (PLD) , many efforts have been dedicated to fabricate highly conductive TNO on glass substrates with a scalable and industrial deposition method, that is, sputtering . In our previous studies using PLD and sputtering , we observed that TNO films crystallized from amorphous precursors that were deposited on unheated substrates, exhibited high conductivity.…”

“…In our previous studies using PLD and sputtering , we observed that TNO films crystallized from amorphous precursors that were deposited on unheated substrates, exhibited high conductivity. To date, many studies using this method reported sputtered polycrystalline TNO films with a resistivity ( ρ ) of 5–9 × 10 −4 Ωcm . These values were, however, somewhat higher than the ρ values for polycrystalline PLD films (4–6 × 10 −4 Ωcm) , implying the presence of additional scattering centers in the sputtered films.…”

“…Nb-doped anatase TiO 2 (TNO) [2,3] is a newly developed TCO with unique properties, such as excellent chemical stability [4], high refractive index [5], and wide conductivity range [6]. Since the discovery of TNO grown by pulsed laser deposition (PLD) [2], many efforts have been dedicated to fabricate highly conductive TNO on glass substrates with a scalable and industrial deposition method, that is, sputtering [7][8][9][10][11][12][13][14][15][16][17][18][19].…”

Effects of Different Amounts of Nb Doping on Electrical, Optical and Structural Properties in Sputtered TiO2−x Films

“…For example, Sato et al reported a value of 1300 µΩ cm for DC-sputtered samples with 6.4 at% Nb and annealing at 400 • C in a vacuum [10], and Oka et al reported 730 µΩ cm with 7 at% Nb and annealing at 600 • C in a vacuum [21]. Mukherjee et al used RF sputtering and reported a value of 700 µΩ cm with 10 at% Nb after annealing at 400 • C in vacuum [22]. In these studies, an active process control based on cathode voltage and plasma emission of the Ti was utilized.…”