Structural and electrical properties of the Al/p-Cu2ZnSnS4 thin film schottky diode

Touati, R.; Trabelsi, Imen; Rabeh, M. Ben; Kanzari, M.

doi:10.1007/s10854-016-6189-3

Cited by 9 publications

(1 citation statement)

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“…Though SD and HJD trail identical I − V relations (equation 1), 𝐼 0 perceived in SD is mostly 10 3 − 10 8 times larger than HJD [25]. The 𝑛 value advanced than one intitles the aberration of the diode device from its archetypal nature, which can be explicated due to the recombination of charge carriers in the depletion section or swelling diffusion I [26,27]. At higher bias, the SCLC is evinced by witnessing the linear plot of 𝐼 as a function of the square of 𝑉 (the plot is not incorporated) [12,28].…”

Section: 𝐼 − 𝑉 Characterizationmentioning

confidence: 98%

A review on electrical transport properties of thin film Schottky diode

Dhruv¹,

Dhruv²

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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The article outlines an inclusive list of thin film Schottky diodes (TFSD) references. The review audits the fabrication and characterization of the TF metal-semiconductor (MS) diode, a TFSD. The work functions of metal (ϕ m) and semiconducting material (ϕs ) determines whether the established MS contact is ohmic or rectifying. Current-voltage (I – V) and capacitance-voltage (C – V) characterizations are essential electrical transport measures of TFSDs. The I – V and C – V outcomes are conferred, and archetypal results are parroted. The TFSD device is emblematic of a heterojunction diode (HJD). The rectification ratio (RR), saturation current (I0), ideality factor (n), Schottky barrier height (ϕB), and carrier concentration may all be calculated using I – V and C – V data. Thermionic emission (TE) and/or space charge limited conduction mechanisms (SCLC) may conduct electricity in TFSDs. Anderson’s model can theoretically be used to construct a TFSD energy band diagram.

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