Structural and electrical properties of InN hollow nanotubes under high pressure

Zhang, Junkai; Ma, Yanzhang; Sun, Meiling; Yin, Guangchao; Yang, Jing

doi:10.1016/j.matlet.2017.11.101

Cited by 3 publications

(4 citation statements)

References 12 publications

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“…Besides, the top-right inset in Figure a clearly reveals a much smaller contribution from the interior of the grain to the total resistance compared to that of grain boundary at high frequencies above 1.58 × 10 6 Hz. Similarly, it was found in InN hollow nanotubes under compression that the impedance arc of grain interior was covered by that of grain boundaries due to the small size effect and the high interface barrier in nanomaterials. The grain boundary effect was boosted compared to the grain effect and dominant in the total electrical transportation.…”

Section: Discussion and Resultsmentioning

confidence: 78%

Correlation between Structural Changes and Electrical Transport Properties of Spinel ZnFe₂O₄ Nanoparticles under High Pressure

Zhang

et al. 2018

ACS Appl. Mater. Interfaces

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The structural phase transition of synthetic ZnFe2O4 nanoparticles (ZFO NPs) is investigated as a function of pressure up to 40.6 GPa at room temperature for the first time, and its associated intriguing electrical transport properties are resolved from in situ impedance spectra and magnetoresistivity measurements. Significant anomalies are observed in the properties of the grain boundary resistance (R gb), the relaxation frequency (f max), and the relative permittivity (εr) in the ZFO NPs under the pressures around 17.5–21.5 GPa. These anomalies are believed to be correlated with a cubic-to-orthorhombic phase transition of ZnFe2O4 at the pressures between 21.9 and 25.7 GPa, which is found to be partially reversible. The pressure-tuned dielectric properties are measured for the cubic and the orthorhombic phases of ZFO, respectively. Remarkably, R gb decreases up to 6 orders of magnitude as a function of pressure in the cubic phase. The dielectric polarization is obviously strengthened with increased f max and decreased εr with pressure in the orthorhombic phase. Furthermore, it is confirmed that the external pressure effectively improves the electrochemical stability of the sample based on the cycled measurements of the impedance spectra at various pressures. The changes in the complex permittivity (ε′, ε″) and the dielectric loss tangent (tan δ) with frequency reveal the irreversible increase in the dielectric loss accompanied by phase transition. The MR measurements indicate that ZFO NPs are superparamagnetic under high pressure of up to 40 GPa. The transmission electron microscopy images reflect the decrease in the grain boundary number and some local amorphization of grains after compression, which provides good explanations for the changes in the electrical transport properties as a function of pressure. Herein, the structural and electrical properties of ZnFe2O4 NPs generated are preserved by quenching the high-pressure phase to ambient conditions, thus providing great choices of ferrites materials for a variety of applications.

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Section: Discussion and Resultsmentioning

confidence: 78%

Correlation between Structural Changes and Electrical Transport Properties of Spinel ZnFe₂O₄ Nanoparticles under High Pressure

Zhang

et al. 2018

ACS Appl. Mater. Interfaces

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“…frequencydependent complex impedance spectral analysis, is an effective in situ approach to study the bulk and grain boundary electrical transport properties of materials. Furthermore, it is often useful to interpret impedance spectra by the use of equivalent circuit simulation, by which the contributions of bulk and grain boundary effects can be clearly distinguished and accurately quantitative [21,22].…”

Section: Resultsmentioning

confidence: 99%

“…HP in situ impedance spectra of Fe-doped chrysotile NTs were measured with the parallel-plate-electrodes that were integrated on the two diamond anvils. The fabrication of electrodes on diamond surface, insulating method between gasket and Mo film electrode, and other experimental details were reported previously [21,22]. In the test, the powdered Fe-doped chrysotile NTs and a small piece of ruby as the pressure calibrant were loaded into a diamond-anvil cell.…”

Section: Methodsmentioning

confidence: 99%

Correlation between structural change and electrical transport properties of Fe-doped chrysotile nanotubes under high pressure

Zhang

Yang

et al. 2018

J. Phys.: Condens. Matter

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Fe doped chrysotile nanotubes (NTs) have been synthesized under controlled hydrothermal conditions, and have been characteristic of layered-walls and room-temperature ferromagnetism. High-pressure in situ impedance spectra and synchrotron XRD measurements are performed on Fe-doped chrysotile NTs to reveal the electrical transport and structural properties under compression. Sample resistance (R ) was found to increase with the pressure elevation, accompanying the step decrease in the grain boundary relaxation frequency (f), which reflects the bandgap broadening and dipoles polarization weakening due to the application of pressure. Furthermore, it is found that both R and f change their pressure dependences at ~5.0 GPa, which is attributed to the nonlinear compressibility of c-axis and even the underlying lattice distortion of monoclinic structure obtained in the XRD observations.

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“…The decrease in the carrier mobility of InN films is mainly due to grain boundary scattering and defect scattering. An appropriate InN buffer layer deposition temperature further improves the atom mobility of InN films, which indicates that an InN buffer layer can reduce defect density in subsequent InN films [35][36][37]. The Hall test results show that InN film grown on free-standing diamond substrate has the best carrier mobility when the InN buffer layer deposition temperature is 100 • C.…”

Section: Analysis Of Electrical Propertiesmentioning

confidence: 96%

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

2022

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In this study, InN films are grown at a relatively low temperature by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) on free-standing diamond substrates. Due to the high lattice mismatch rate between InN film and the free-standing diamond substrate, the function of a buffer layer is to build a bridge between the substrate and film to reduce the lattice mismatch between them. Therefore, here, we study the performance impact of introducing an InN buffer layer at various deposition temperatures and explore the optimal buffer layer deposition temperature used to grow relatively high-quality InN films. The experimental results show that when an InN buffer layer is introduced at a deposition temperature of 100 °C, the growth direction of the InN film is perpendicular to the substrate with a high c-axis preferred orientation, the roughness of the surface is minimal, and the particle sizes are consistent with growth in the same direction. Additionally, the carrier mobility is highest, and the carrier concentration is lowest compared with other conditions.

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Structural and electrical properties of InN hollow nanotubes under high pressure

Cited by 3 publications

References 12 publications

Correlation between Structural Changes and Electrical Transport Properties of Spinel ZnFe₂O₄ Nanoparticles under High Pressure

Correlation between Structural Changes and Electrical Transport Properties of Spinel ZnFe₂O₄ Nanoparticles under High Pressure

Correlation between structural change and electrical transport properties of Fe-doped chrysotile nanotubes under high pressure

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

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Structural and electrical properties of InN hollow nanotubes under high pressure

Cited by 3 publications

References 12 publications

Correlation between Structural Changes and Electrical Transport Properties of Spinel ZnFe2O4 Nanoparticles under High Pressure

Correlation between Structural Changes and Electrical Transport Properties of Spinel ZnFe2O4 Nanoparticles under High Pressure

Correlation between structural change and electrical transport properties of Fe-doped chrysotile nanotubes under high pressure

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

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Correlation between Structural Changes and Electrical Transport Properties of Spinel ZnFe₂O₄ Nanoparticles under High Pressure

Correlation between Structural Changes and Electrical Transport Properties of Spinel ZnFe₂O₄ Nanoparticles under High Pressure