Titanium nitride (TiN) fi lms were deposited on Si(100) substrates by laser molecular beam epitaxy(LMBE), and their properties of structure and resistivity with varying N 2 pressure were investigated. The results showed that atomically fl at TiN fi lms with layer-by-layer growth mode were successfully grown on Si(100) substrates, and (200) was the preferred orientation. With the increasing of N 2 pressure, the N/Ti ratio gradually increased and the diffraction peak progressively shifted towards lower diffraction angle. At pressure of 0.1 Pa, stoichiometric TiN film was formed which exhibited the characteristic diffraction angle of (200) plane. All fi lms showed high refl ectance to infrared spectrum and the fi lms with overstoichiometry and understoichiometry had a higher resistivity owing to the surface particles and lattice distortion, while the stoichiometric TiN fi lm depicted the minimum resistivity, around 19 μΩ cm.