Structural and electrical properties of amorphous GaAs sputtered at high substrate temperature (220 and 400°C)

Hadadi, Benachir El; Carchano, H.; Seguin, Jean-Luc; Tijani, H.

doi:10.1016/j.vacuum.2005.05.002

Cited by 9 publications

(11 citation statements)

References 20 publications

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“…The hopping conductivity is the main migration mechanism in LT-GaAs [4,5]. The comparison with LT-GaAs enables to suggest that E F is fastened near the middle of the band gap (BG) at =E v +(0.6-0.8) eV in GaAs films deposited by PIA [4][5][6][7]. This is due to high concentration of N>10 18 cm -3 of defects like EL2-centers (As Ga 0,+ , pairs As Ga V Ga , As Ga As i ) creating LS deep within BG [4,5,12,13].…”

Section: Resultsmentioning

confidence: 99%

“…In the case of Al 2 O 3 , the effect on the charge transfer barrier between GaAs VB and the conduction band (CB) bottom is more significant (a barrier >3.2 eV) [15]. The relations between values   and   are conditioned by the high content of defects in films as compared to с-GaAs and by the influence of a hopping component  h involving LS defects similar to the approach [5][6][7][8]12]. The approximation of curves  ph (Т) indicates the predominance  h over  а within the interval Т=300-500 K in PIA films.…”

Section: Resultsmentioning

confidence: 99%

“…Vacuum annealing modifies the electronic state of film materials in consequence of its partial crystallization, the change in the defect charge state and the formation of defect complexes [5,7,8,[11][12][13]15]. LS density near the film surface and on the boundary with substrate changes, arsenic clusters form [4,8,12].…”

Section: Resultsmentioning

confidence: 99%

“…The properties are affected by the defect annealing and recharging, as well as the dissociation of unstable complexes [11,13]. The dependences N(E F )( 0 ,   ) indicate less disordering of GaAs/Si films by defects in comparison with GaAs/Al 2 O 3 and a-GaAs films (figure 4) [6][7][8]12].…”

Section: Resultsmentioning

confidence: 99%

“…The unique properties of amorphocrystalline а-GaAs films deposited from RF-plasma by impulse methods [6,7], thermal deposition, co-evaporation of the elements [8] and laser deposition [9] enable to use them in the production of layers that match lattice parameters during the deposition of GaAs/Si and heterostructures on their basis. The characteristics of such films differ from с-GaAs due to their complex structure and strong defect disordering.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Кабышев¹,

Конусов²,

Ремнев³

et al. 2014

J. Phys.: Conf. Ser.

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Abstract. Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10 -2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Кабышев¹,

Конусов²,

Ремнев³

et al. 2014

J. Phys.: Conf. Ser.

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Optical absorption of radio frequency sputtered GaAs(Ti) films

Boronat

Silvestre

Marrón

et al. 2012

J Mater Sci: Mater Electron

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Composition and optical absorption of thin films\ud of GaAs(Ti) and GaAs, deposited by sputtering on glass\ud substrates under different process conditions, have been\ud investigated. The thin films obtained are typically 200 nm\ud thick. ToF–SIMS measurements show a quite constant\ud concentration and good uniformity of Ti profiles along the\ud GaAs(Ti) layers in all cases and EPMA results indicate that\ud Ti content increases with the substrate temperature in the\ud sputtering process. Measurements of the transmittance and\ud reflectance spectra of the GaAs and GaAs(Ti) thin films have\ud been carried out. In the optical characterization of the films it\ud is found that optical absorption is enhanced in all samples\ud containing Ti. The determination of the optical gap from the\ud optical absorption, shows optical gap variations from 1.15 to\ud 1.29 eV in the GaAs thin films, and from 0.83 to 1.13 eV in\ud the GaAs(Ti) thin films. The differences in absorption and\ud EgTAUC observed between samples of GaAs and GaAs(Ti)\ud are consistent with the presence of an intermediate band.Peer ReviewedPostprint (published version

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Influence of Process Parameters on the RF Sputtered GaP Thin Films

Mota

Chandra

Ventura³

et al. 2013

Journal of Materials Science & Technology

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In this work, gallium phosphide thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering technique under different depositions conditions. The X-ray diffraction analysis showed a diversity of states: from amorphous in the films deposited at 175 C to a nearly stoichiometric and polycrystalline films, exhibiting cubic phase with preferred orientation along (220), in the films deposited at temperatures higher than 250 C. Scanning electron microscopy images revealed that all films were uniform with a smooth surface, while the energy-dispersive spectroscopy (EDS) analysis showed that there was a visible dependence on the Ga/P ratio in the deposition conditions and confirmed that a residual Ga metallic phase was presented in the surface of all the films. The Raman analysis showed the structural evolution of the GaP films was strongly dependent on the deposition conditions. The conductivity of the films was slightly dependent on the argon pressure and the rf power, but strongly dependent on the deposition temperature, mainly above 200 C. The optical transmission and absorption analyses of the GaP films revealed an indirect band gap of w1.70 eV in the films deposited at temperatures less than 200 C, which transited to a band gap of 2.26 eV as the deposition temperature was close to 300 C.

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Structural and electrical properties of amorphous GaAs sputtered at high substrate temperature (220 and 400°C)

Cited by 9 publications

References 20 publications

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Optical absorption of radio frequency sputtered GaAs(Ti) films

Influence of Process Parameters on the RF Sputtered GaP Thin Films

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