2020
DOI: 10.1007/s11664-020-08220-9
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Structural and Electrical Properties of Cerium Oxides Doped by Sb3+ and Bi3+ Cations

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Cited by 8 publications
(8 citation statements)
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“…This peak shift phenomenon showed the successful doping of Bi 3+ at the site of Sb in the SbPS 4 crystal. The ion radius of Bi 3+ (1.21 Å) is larger than that of Sb 3+ (0.76 Å); 35 so, the substitution of Bi 3+ makes the lattice parameter larger, which leads to the movement of diffraction peaks to a higher angle. Among them, the peak of the (020) and (022) crystal planes moved from 13.6° to 13.7° and from 15.7° to 15.9°, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…This peak shift phenomenon showed the successful doping of Bi 3+ at the site of Sb in the SbPS 4 crystal. The ion radius of Bi 3+ (1.21 Å) is larger than that of Sb 3+ (0.76 Å); 35 so, the substitution of Bi 3+ makes the lattice parameter larger, which leads to the movement of diffraction peaks to a higher angle. Among them, the peak of the (020) and (022) crystal planes moved from 13.6° to 13.7° and from 15.7° to 15.9°, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The formed slurry is then stirred to attain good homogeneity, evaporated and dried overnight under inert flow to have the powdered nanoparticles (Fig 3b). To have the active catalyst, the powdered catalysts is reduced under H 2 at high temperature 4,6,37 .…”
Section: Impregnation Methodsmentioning
confidence: 99%
“…Under the influence of IB-forming dopants (such as SnO2, TiO2, and Sb2O3), IB nucleation occurred in ZnO grains, and these grains grew dramatically and anisotropically in the direction of the inherent IB, causing plate-like development of the grains. Given the smaller ionic radius of Ga 3+ than that of Sb 3+ (0.076 nm) [24,38] and its larger electronegativity (1.579) than that of Sb 3+ (1.476) [39] , when Ga2O3 existed in the grain boundary, Ga 3+ could work as an IB-forming dopant and affect the growth behavior of ZnO grain more efficiently. When combined with the XPS results in Figure 4, we can see that with increased Ga2O3 in ZnO varistors, more Ga2O3 existed in the grain boundary, consequently, the maximum and minimum aspect ratios of ZnO grain initially increased slowly and then rapidly.…”
Section: Microstructure Characteristics Of Zno Based Varistorsmentioning
confidence: 99%
“…In summary, the electrical properties of the trivalent ion metallic oxide doped ZnO varistors have been extensively studied [23,24] , but it still exists some deficiencies(such as lower voltage gradient), also the effect of dopants on the mechanical and thermal properties of ZnO varistors is rarely reported. In this work, we introduced various Ga additives into a ZnO based varistor and selected nano-ZnO particles as the main raw materials to try to improve the voltage gradient and mechanical properties, modify the thermal properties of ZnO based varistors at same time.…”
Section: Introductionmentioning
confidence: 99%