Efficient route to TlBa 2 Ca 2 Cu 3 O 9+x thin films by metal-organic chemical vapor deposition using TlF as a thallination source Epitaxial growth and interfacial properties of CaCuO 2 films deposited on various perovskite related substrates by pulsed laser ablation were investigated. Highly c-axis oriented films can be stabilized on SrTiO 3 , LaAlO 3 , (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 , and NdGaO 3 single crystalline substrates. However, the interface region between film and substrate is often found to be strongly defective. CaCuO 2 films grown on (001)-and (110)-oriented NdGaO 3 show the best crystallinity with lattice parameters nearly the same as for bulk CaCuO 2 and a mosaic spread of about 0.1 . Regions where the interfacial growth is nearly perfect, dominantly show an A-site termination of NdGaO 3 , i.e., a layer stacking sequence of GaO 2 /NdO/CuO 2 /Ca. Resistivity measurements on the films show thermally activated behavior between 300 K and 170 K, i.e., ln R $ T A /T, where the activation temperature T A amounts to 116 K, and Mott variable range hopping, i.e., ln R $ T À1/4 , below about 120 K. With decreasing film thickness, the resistivity increases remarkably, indicating that the interfacial conductivity is more insulating than metallic in character as expected from hole-doping of CaCuO 2 due to apical oxygen at the NdO/CuO 2 interface. Measurements of the magnetization do not show any indications for two-dimensional superconductivity at the interface. The experimental results suggest that the conductivity is rather caused by particulates of cupric oxide found in a distance of about 10 nm from the interface in the upper part of the film. V C 2012 American Institute of Physics. [http://dx.