Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111)

Park, Dong Woo; Jeon, Seong Gi; Lee, Cheul-Ro; Lee, Sang Jun; Song, Jae Yong; Kim, Jun Oh; Noh, Sam Kyu; Leem, Jae‐Young

doi:10.1038/srep16652

Cited by 18 publications

(11 citation statements)

References 30 publications

(42 reference statements)

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“…This indicates that the InAs NWs for the NW4 sample are relatively uniform compared to the other NW samples. More details of the structural characteristics of InAs NWs depending on the growth parameters are shown in our previous report26. Figure 1(e) shows the THz current signals of the InAs NWs with respect to the time delay for the NW samples.…”

Section: Resultsmentioning

confidence: 87%

Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water

Park

Hwang

et al. 2016

Sci Rep

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We report improvement of terahertz (THz) wave radiation for Si-based catalyst-free InAs nanowires (NWs) by simple dipping into tap water (DTW). In addition, the possibility of using InAs NWs as a cost-effective method for biomedical applications is discussed by comparison to bulk InAs. The peak-to-peak current signals (PPCSs) of InAs NWs measured from THz time-domain spectroscopy increased with increasing NW height. For example, the PPCS of 10 μm-long InAs NWs was 2.86 times stronger than that of 2.1 μm-long NWs. The THz spectra of the InAs NWs obtained by applying a fast Fourier transformation to the current signals showed a main frequency of 0.5 THz, which can be applied to a variety of medical imaging systems. After the DTW process, structural variation was not observed for 2.1 μm-long InAs NWs. However, the top region of several InAs NWs with heights of 4.6 and 5.8 μm merged into a conical structure. InAs NWs with a height of 10 μm resulted in a bundle feature forming above the conical shape, where the length of bundle region was 4 μm. After the DTW process, the PPCS for 10 μm-long InAs NWs increased by 15 percent compared to that of the as-grown case.

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Section: Resultsmentioning

confidence: 87%

Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water

Park

Hwang

et al. 2016

Sci Rep

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“…3a ). These planar defects are commonly observed in the growth of InAs or InGaAs nanowires without foreign catalyst by MOCVD [ 26 – 28 ]. Figure 3b shows a bright-field (BF) low-resolution TEM image of a typical InGaAs/InP core−shell nanowire with Xv of 35% (as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Chen

Yang

et al. 2018

Nanoscale Res Lett

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We report on the growth and characterization of InGaAs/InP core–shell nanowires on Si–(111) substrates by metal-organic chemical vapor deposition (MOCVD). The strain at the core–shell interface induced by the large lattice mismatch between the InGaAs core and InP shell materials has strong influence on the growth behavior of the InP shell, leading to the asymmetric growth of InP shell around the InGaAs core and even to the bending of the nanowires. Transmission electron microscopy (TEM) measurements reveal that the InP shell is coherent with the InGaAs core without any misfit dislocations. Furthermore, photoluminescence (PL) measurements at 77 K show that the PL peak intensity from the InGaAs/InP core−shell nanowires displays a ∼ 100 times enhancement compared to the only InGaAs core sample without InP shell due to the passivation of surface states and effective carrier confinement resulting from InP shell layer. The results obtained here further our understanding of the growth behavior of strained core–shell heterostructure nanowires and may open new possibilities for applications in InGaAs/InP heterostructure nanowire-based optoelectronic devices on Si platform.

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“…In most cases, Si is employed as an n-type dopant in InAs nanowires. [19][20][21][22][23] Using Si doping, densities in the order of 10 19 cm −3 are achieved. 20,21 However, apart from the increase of the carrier concentration in the nanowire, Si doping affects the growth kinetics as well as the nanowire dimensions.…”

Section: Introductionmentioning

confidence: 99%

Te-doped selective-area grown InAs nanowires for superconducting hybrid devices

Perla¹,

Faustmann²,

Koelling³

et al. 2021

Preprint

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Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated a series of InAs nanowires which conductivity has been modified by n-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined with atomic probe tomography to obtain information about the local incorporation of Te atoms. It was found that the Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. The efficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, a Josephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed a clear increase of the critical current with increase of the dopant concentration.

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Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111)

Cited by 18 publications

References 30 publications

Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water

Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Te-doped selective-area grown InAs nanowires for superconducting hybrid devices

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