Structural and electrical properties of the Ge
                x
              Si1−x
                     /Si heterojunctions obtained by the method of direct bonding

Argunova, T. S.; Belyakova, E. I.; Grekhov, I. V.; Zabrodskiĭ, A. G.; Kostina, L. S.; Sorokin, L. M.; Shmidt, N. M.; Yi, Juyeon; Jung, Jaimyun; Je, Jung Ho; Абросимов, Н. В.

doi:10.1134/s1063782607060127

Cited by 2 publications

(3 citation statements)

References 17 publications

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“…In order to examine the dislocation effect on charge transport, we prepared p-SiGe/n-Si heterostructures: the SiGewafers were bonded to dislocation-free Si wafers (ρ v = 5 cm) of the same orientation by using surface grooved bonding technology [20]. The interface continuity was confirmed by the x-ray topography (data not shown).…”

Section: Resultsmentioning

confidence: 99%

Investigation of dislocations in Czochralski grown Si_1−xGe_xsingle crystals

Argunova

Jung

et al. 2009

J. Phys. D: Appl. Phys.

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Dislocations in p-type Si1−xGex single crystals (2–8 at% Ge) grown with the Czochralski technique are investigated by synchrotron white beam topography in transmission geometry. As the Ge concentration increases, the dislocation structure evolves from individual dislocations to slip bands and sub-grain boundaries, and the dislocation density increases from <102 cm−2 to 105–106 cm−2 at 8 at%. We discuss the effect of dislocations on the electrical characteristics such as resistivity ρv, Hall hole mobility μp, carrier lifetime τe and I–V characteristics. Here τe and I–V characteristics are measured from the diodes fabricated by bonding the p-Si1−xGex to n-Si wafers. I–V characteristics are not deteriorated in spite of a five times decrease in τe with the Ge concentration.

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Section: Resultsmentioning

confidence: 99%

Investigation of dislocations in Czochralski grown Si_1−xGe_xsingle crystals

Argunova

Jung

et al. 2009

J. Phys. D: Appl. Phys.

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“…Structural defects in the SiGe bulk and at the SiGe/Si interfaces were investigated by X-ray topography combined with phase contrast imaging [8,15,17]. The experiments were performed on the 7B2 X-ray microscopy beamline of the Pohang Light Source, which is third--generation synchrotron radiation (SR) source, in Pohang, Republic of Korea.…”

Section: Samples and Techniquesmentioning

confidence: 99%

“…The electrical parameters of bulk Si 1−x Ge x were previously investigated [4,13,14], but multiplication of dislocations with Ge content or any correlation between the structure and the properties are largely unexplored. We discuss the perfection of Cz-grown Si 1−x Ge x single crystals (0.02 < x ≤ 0.085) and compare the structural quality with the electrical resistance and the carrier lifetime measured in the pre-studied samples [15,8]. We also an-(239) alyze currentvoltage characteristics and reverse recovery processes from the bonded diodes p-Si 1−x Ge x /n-Si [7,16].…”

Section: Introductionmentioning

confidence: 96%

Si_{1-x}Ge_{x} Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties

Argunova

Kostina³

et al. 2013

Acta Phys. Pol. A

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Defects in Si1−xGex single crystals (28.5 at.% Ge) grown by the Czochralski method are investigated by synchrotron white beam topography and phase contrast imaging techniques. As the Ge concentration increases, dislocation structure evolves from individual dislocations to slip bands and sub-grain boundaries. We discuss the eect of dislocations on the electrical characteristics such as resistivity ρv, the Hall hole mobility µp and carrier lifetime τe. Diodes are fabricated by bonding p-Si1−xGex to n-Si wafers to investigate IV characteristics and reverse recovery process. IV characteristics are not deteriorated in spite of a ve times decrease in τe with Ge concentration. A small reverse recovery time (determined by the accumulated charge) can be achieved for an optimised preset Ge concentration.

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Structural and electrical properties of the Ge x Si1−x /Si heterojunctions obtained by the method of direct bonding

Cited by 2 publications

References 17 publications

Investigation of dislocations in Czochralski grown Si_1−xGe_xsingle crystals

Investigation of dislocations in Czochralski grown Si_1−xGe_xsingle crystals

Si_{1-x}Ge_{x} Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties

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Structural and electrical properties of the Ge x Si1−x /Si heterojunctions obtained by the method of direct bonding

Cited by 2 publications

References 17 publications

Investigation of dislocations in Czochralski grown Si1−xGexsingle crystals

Investigation of dislocations in Czochralski grown Si1−xGexsingle crystals

Si_{1-x}Ge_{x} Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties

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Product

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Investigation of dislocations in Czochralski grown Si_1−xGe_xsingle crystals

Investigation of dislocations in Czochralski grown Si_1−xGe_xsingle crystals