Structural and electrical characteristics of barium modified bismuth-sodium titanate (Bi0.49Na0.49Ba0.02)TiO3

Effects of sintering temperature and holding time on the microstructure and electric properties of Ba(Zr0.3Ti0.7)O3 ceramics

“…There are some small grains at the boundaries of large grains. This situation is caused by abnormal grain growth [18,19] occurring as a result of very high local rates of interface migration and is enhanced by the topically formed liquid at grain boundaries [9]. Since there is no liquid phase in the SEM images, the abnormal grain growth may have been caused by different mecha- nisms, such as anisotropic grain boundary energies [20].…”

“…However, when the temperature reaches 1450°C, both the structure and the electric properties deteriorate significantly. So the dielectric constant of BZT ceramics attains the maximum value only at certain temperature, and with further rise in temperature it decreases [9]. Moreover, Cai et al [10] found that when the holding time increases from 0.5 h to 8 h, the average grain size of Ba(Zr 0.2 Ti 0.8 )O 3 ceramics sintered at 1350°C increases from 25 to 80 µm monotonously.…”

“…In recent years, many researchers have studied the effects of sintering temperatures and holding time on the structure and dielectric properties of BZT ceramics [7][8][9][10][11][12][13][14][15]. It was reported that the maximum of dielectric constant of BZT ceramics increased from 3600 to 5800 as the sintering temperature increased from 1400 to 1550°C.…”

Effect of cerium oxide addition on optical, electrical and dielectric characteristics of (Bi0.5Na0.5)TiO3 ceramics

“…For the other two compositions (i.e., x=0.05 and 0.10),  Z increases from room temperature to 100°C, and then decreases with increase in temperature. The relaxation in the ceramic compound is most likely associated with the immobile defects and orientation effects of relaxation species [26]. For ready reference we provide in table 3 the values of Z′ and Z″ at room temperature corresponding to the three frequencies.…”

“…Cerium being a rare-earth element in the lanthanide series exists in the free metal or oxide form, and can exchange oxidation states between the cereous-cerium (III) and ceric-cerium (IV). CeO 2 is a semiconductor with moderate band gap (3-3.6 eV), high dielectric constant (23)(24)(25)(26) and refractive index (2.2-2.8) [7]. As reported, it has multiple applications, such as electrolyte material for solid oxide fuel cells, high-storage capacitor devices, gas sensing, polishing materials, ultraviolet absorbents and optical devices [8][9][10].…”