Structural and electrical anisotropy of (001)-, (116)-, and (103)-oriented epitaxial SrBi2Ta2O9 thin films on SrTiO3 substrates grown by pulsed laser deposition

Abstract

Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (001), (116), and (103) orientations have been grown by pulsed laser deposition on (001)-, (011)-, and (111)-oriented Nb-doped SrTiO3 substrates. X-ray diffraction pole figure and φ-scan measurements revealed that the three-dimensional epitaxial orientation relation SBT(001)‖SrTiO3(001), and SBT[11̄0]‖SrTiO3[100] is valid for all cases of SBT thin films on SrTiO3 substrates, irrespective of their orientations. Atomic force microscopy images of the c-axis-oriented SBT revealed polyhedron-shaped grains showing spiral growth around screw dislocations. The terrace steps of the c-axis-oriented SBT films were integral multiples of a quarter of the lattice parameter c of SBT (∼0.6 nm). The grains of (103)-oriented SBT films were arranged in a triple-domain configuration consistent with the symmetry of the SrTiO3(111) substrate. The measured remanent polarization (2Pr) and coercive field (2Ec) of (116)-oriented SBT films were 9.6 μC/cm2 and 168 kV/cm, respectively, for a maximum applied electric field of 320 kV/cm. Higher remanent polarization (2Pr=10.4 μC/cm2) and lower coercive field (2Ec=104 kV/cm) than those of SBT(116) films were observed in (103)-oriented SBT thin films, and (001)-oriented SBT revealed no ferroelectricity along the [001] axis. The dielectric constants of (001)-, (116)-, and (103)-oriented SBT were 133, 155, and 189, respectively.

Strain tuning of electronic structure inBi4Ti3O12−LaCoOChoi1, Lee2 2015Phys. Rev. BSelf Cite18120View full textAdd to dashboardCite

“…Samples were grown at 700 °C in 100 mTorr at the repetition rate of 10 Hz. The high repetition rate was used to prevent the loss of volatile Bi in the films during the growth [15,16,25]. We controlled the laser pulse number in order to systematically change the LCO concentration in the films.…”

Fabrication and Physical Properties of Mono- and Multilayer Metallic Nanostructures

“…Якщо на поверхні присутня велика кількість дефектів, то в процесі росту одержується пок-риття з великими перепадами по висоті. Залежність морфології тонких плівок SrTiO 3 від якости підложжя оксиду магнію було досліджено в роботі [44]. Якість покриття змінювали за допомо-гою термічного відпалювання.…”

Direct Comparison of Structural and Electrical Properties of Epitaxial (001)-, (116)-, and (103)-Oriented SrBi2Ta2O9 Thin Films on SrTiO3 and Silicon Substrates

“…The deposition conditions used for the film growth along with the various characterization methods are described in detail elsewhere [5,6]. Briefly, the 250 nm thick SBT films were grown both on single crystalline Nb-doped STO with (001), (011), and (111) orientations and on yttriastabilized ZrO 2 -buffered (YSZ-buffered) Si(100) substrates covered with conducting SrRuO 3 (SRO) bottom electrodes.…”

“…The epitaxial growth of SBT films both with c-axis and non-c-axis orientations was investigated on single crystal substrates such as SrTiO 3 (STO), LaSrAlO 4 , etc. [3][4][5]. Particularly, the epitaxial orientation relationship of either SBT or SrBi 2 Nb 2 O 9 (SBN) films grown on (011)-and (111)-oriented STO substrates has been debated, for instance whether the (001) plane of SBT or SBN films is exactly parallel to the (001) plane of STO substrates in the non-c-axis-oriented SBT/SBN films with (116) and (103) orientations on STO(011) and STO(111) substrates [3][4][5], or whether a small deviation occurs.…”

“…[3][4][5]. Particularly, the epitaxial orientation relationship of either SBT or SrBi 2 Nb 2 O 9 (SBN) films grown on (011)-and (111)-oriented STO substrates has been debated, for instance whether the (001) plane of SBT or SBN films is exactly parallel to the (001) plane of STO substrates in the non-c-axis-oriented SBT/SBN films with (116) and (103) orientations on STO(011) and STO(111) substrates [3][4][5], or whether a small deviation occurs. In this work, we report the epitaxial orientation relationship investigated by means of x-ray diffraction φ scans as well as a comparison between the structural and electrical properties of c-axis and non-c-axis-oriented SBT films grown on STO and on Si(100) substrates.…”