Structural and elastic properties of transition-metal superlattices

Jones, R. S.; Slotwinski, John A.; Mintmire, J. W.

doi:10.1103/physrevb.45.13624

Cited by 19 publications

(8 citation statements)

References 35 publications

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“…18 Computer simulations employing embedded-atom-method ͑EAM͒ potentials 13,14,19 have found anomalies of the order of 50%, primarily connected with the influence of the interfaces-either structural disorder 14 or interface-driven distortions in the interlayer spacings. 13 Similar simulations 20 have also shown no anomalies. The situation is thus that, experimentally, elastic anomalies are a real effect in metal superlattices but no consensus exists about the driving mechanism behind them.…”

Section: Introductionsupporting

confidence: 59%

Elastic constants of Mo/V superlattices

Papadia-Einarsson

1997

Phys. Rev. B

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Elastic moduli of Mo, V, and Mo n /V n superlattices with nр3 are calculated in the full-potential linear muffin-tin orbital scheme. No modulation dependence is found for the bulk modulus of the superlattices. Comparisons are made with predictions from continuum models for elastic moduli of layered materials and surprising agreement is found between those and the calculated constants. In the context of elastic anomalies frequently observed for metal superlattices, an estimation employing the Hashin-Shtrikman bounds for composites gives that a softening of Young's modulus up to 30% would be obtained if the disorder at the interfaces were extreme. This suggests that the frequently observed elastic anomalies for small-modulation superlattices is intimately connected with the quality of the interfaces.

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Section: Introductionsupporting

confidence: 59%

Elastic constants of Mo/V superlattices

Papadia-Einarsson

1997

Phys. Rev. B

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“…19) After these works, we assume that a change in the Young's modulus due to ' intk , ÁE int , can be estimated as Fig. 9 For Al-Si(Cu) sp films, E f observed after annealing at 600 K are compared with E f observed in the as deposited state.…”

Section: Discussionmentioning

confidence: 99%

Elasticity Study of Nanostructured Al and Al-Si(Cu) Films

2004

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In order to get an insight into the elastic property of nanostructured fcc metal films, the Young's modulus, E f , and the internal friction, Q À1 f , in Al-Si(Cu) sp and Al sp films prepared by rf-sputtering and those in Al-Si(Cu) ve and Al ve films by vacuum evaporation were studied for the thickness, d, range of 4 to 300 nm, where the mean grain size was below 40 nm. A decrease in E f and an increase in Q À1 f with decreasing d associated with the grain boundary anelastic process (GBAP) activated above 200 K are commonly observed. GBAP in the nanostructured Al is hardly modified by alloying with Si and Cu, and is very similar to GBAP reported in nanostructured Ag and Au. It is indicated that the elastic property of Al-Si(Cu) sp , Al sp , Al-Si(Cu) ve and Al ve nanocrystalline films is governed by GBAP, the internal stress and the surface oxide layer.

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“…We surmise that the decrease in R for the medium term here is associated with the grain growth mentioned above, and that the E GB in very thin nanometer-thick films is much lower than the E GB found in thin micrometer-thick films. The lengthening of a may take place during the EM tests as mentioned above, and cause a decrease in the Young's modulus along the film surface due to dilatation [15,16]. In contrast, as shown in Fig.…”

Section: Discussionmentioning

confidence: 84%