Abstract:100) epitaxial Ba 0.6 Sr 0.4 TiO 3 (BST) thin films were grown on Si substrates using a 9 nm thick SrO buffer layer. The phase shifter fabricated on BST films grown on a SrO buffered Si substrate showed a larger figure of merit (FOM) of 24.7°/dB as a result of improving the phase tuning while retaining an appropriate insertion loss compared to that (15.3°/dB) for the BST/MgO structure. This work demonstrates that a thin SrO buffer layer plays an important role in the successful integration of BST-based microwa… Show more
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