Abstract:95% Al2O3 ceramics and Si <100> crystal were implanted by Ti ion in a MEVVA implanter. The influence of implantation parameters was studied by varying ion fluence. The samples were implanted by 80 keV Ti ion with fluences from 1 x1015 to 1 x 1018 ions/cm2, respectively. The samples were investigated by SEM, SAM, and four-probe measurement. Differentmorphologies were observed on the surfaces of the samples due to irradiation damage, and clearly related to implantation parameters. XRD spectra confirm forma… Show more
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