Structural analysis of the heat-treated 4H(6H)-SiC(0001)Si surface

Tsukamoto, Takeshi; Hirai, Masaaki; Kusaka, M.; Iwami, Motohiro; Ozawa, Takehiro; Nagamura, Toshihiko; Nakata, Takao

doi:10.1016/s0039-6028(96)01008-4

Cited by 53 publications

(27 citation statements)

References 13 publications

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“…There is a (6 √ 3 × 6 √ 3)R30 0 reconstruction in the first 2-3 graphene layers on this surface. [7,35] The graphene has a nonzero corrugation of about 0.25Å [27] that could be enough to lock the growing film into registry.…”

Section: Discussionmentioning

confidence: 99%

Structural properties of the multilayer graphene/4H−SiC(0001¯)system as determined by surface x-ray diffraction

et al. 2007

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We present a structural analysis of the multi-layer graphene-4HSiC(0001) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (0001) surface have a graphene-substrate bond length that is very short (1.62Å). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab-initio calculations. The measurements also indicate that multi-layer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191].

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Section: Discussionmentioning

confidence: 99%

Structural properties of the multilayer graphene/4H−SiC(0001¯)system as determined by surface x-ray diffraction

et al. 2007

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“…On the other hand, periodic structures are formed by annealing SiC surfaces in ultra high vacuum (UHV), especially by annealing in a Si-rich environment to prevent the surface graphitization. Depending on polytypes, polarity and sample preparation procedures, various surface structures have been reported [3,[5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Observations of Graphitized SiC Surfaces by STM

Hisada

Mitsuoka

Mukainakano

et al. 2004

e-J. Surf. Sci. Nanotechnol.

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“…Many synthesis techniques are reported in literature, including mechanical 1 and chemical exfoliation, 10,11 chemical vapor deposition (CVD), 12 reduction of graphene oxide (GO) 13 and epitaxial growth on SiC. 14,15 To date, none of them has yielded an economically viable synthesis route for high-quality graphene. Chemical vapor deposition, using a carbon containing gas over single-crystalline transition metal templates, is amongst the most promising candidates to yield high-quality large area graphene sheets at low cost.…”

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confidence: 99%

Single-Layer Graphene Synthesis on a Al₂O₃(0001)/Cu(111) Template Using Chemical Vapor Deposition

Verguts¹,

Vrancken

Vermeulen³

et al. 2016

ECS J. Solid State Sci. Technol.

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The parameter space of graphene growth using chemical vapor deposition on an untwinned single-crystalline Al 2 O 3 (0001)/Cu(111) template is discussed. The influence of growth temperature, methane flow and carbon dose is examined to assess graphene quality and multilayer coverage. An optimized growth window is identified yielding single-layer graphene. Production temperatures above 850 • C result in a graphene quality improvement, but also an increase in multilayer coverage. Adapting graphene dosages by minimizing the growth time is the key element to reduce the amount of multilayer domains without affecting the quality. After graphene transfer, the multilayer graphene areas show a large increase in I 2D /I G peak ratio, which indicates a turbostratic stacking order of graphene multilayer domains. Two growth models are put forward, i.e. a carbon penetration mechanism and an adsorption-diffusion mechanism.

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Structural analysis of the heat-treated 4H(6H)-SiC(0001)Si surface

Cited by 53 publications

References 13 publications

Structural properties of the multilayer graphene/4H−SiC(0001¯)system as determined by surface x-ray diffraction

Structural properties of the multilayer graphene/4H−SiC(0001¯)system as determined by surface x-ray diffraction

Observations of Graphitized SiC Surfaces by STM

Single-Layer Graphene Synthesis on a Al₂O₃(0001)/Cu(111) Template Using Chemical Vapor Deposition

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Structural analysis of the heat-treated 4H(6H)-SiC(0001)Si surface

Cited by 53 publications

References 13 publications

Structural properties of the multilayer graphene/4H−SiC(0001¯)system as determined by surface x-ray diffraction

Structural properties of the multilayer graphene/4H−SiC(0001¯)system as determined by surface x-ray diffraction

Observations of Graphitized SiC Surfaces by STM

Single-Layer Graphene Synthesis on a Al2O3(0001)/Cu(111) Template Using Chemical Vapor Deposition

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Product

Resources

About

Single-Layer Graphene Synthesis on a Al₂O₃(0001)/Cu(111) Template Using Chemical Vapor Deposition