Structural analysis of quaternary Se85−xSb10In5Agx bulk glassy alloys

Sharma, Rolee; Sharma, Shaveta; Kumar, Praveen; Chander, Ravi; Thangaraj, R.; Mian, Md. Suruz

doi:10.1063/1.4929257

Cited by 2 publications

(2 citation statements)

References 10 publications

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“…One another weak peak at ~ 210 cm -1 can be ascribed from either Se-Se chain bond or asymmetrical stretching of pyramidal SbSe3 mode [21]. The broad band at 188 cm -1 can be assigned to heteropolar Sb˗Se bond vibrations in Sb(Se1/2)3 pyramidal structural units [22]. With the increase in indium content, the intensity of two domi-nant peaks at 188 and 250 cm -1 decreases and fades away for x  20, 25 and favours the nucleation of new band at 212 cm -1 which is due to the vibrations of In and Se atoms.…”

Section: Raman Analysismentioning

confidence: 99%

Structure and Optical Properties of Polycrystalline InxSb30 – xSe70 (0 ≤ x ≤ 25) Chalcogenide Alloys

Sharma¹,

Sharma²,

Kumar³

et al. 2016

J. Nano- Electron. Phys.

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The spectroscopic studies of various physical properties of glassy and polycrystalline chalcogenide alloys are important due to their importance as active materials in various solid state devices. The composition dependence of these properties are explained on the basis of coordination number, but the splitting of this effect from the nature of additive is imperative for furthering the understanding of these systems. In the present work, the structural and spectroscopic investigations of melt quenched bulk In-Sb-Se chalcogenide alloys have been studied by XRD, RAMAN and optical spectroscopic techniques. The XRD study reveals the polycrystalline nature of the samples. The composition was analysed using the energy dispersive X-ray spectroscopy technique. The XRD study reveals the crystallization of Sb2Se3 and -In2Se3 phases while the increase in the intensity for -In2Se3 phase has been observed with the increase in indium content. The RAMAN spectra also reveal the formation of chalcogenide based Sb and In structural units. The diffused reflectance spectrum was used to calculate the optical absorption in 800-1500 nm spectral region and used to study the composition dependence of the optical gap in these samples. The results have been discussed in conjunction with the heterogeneous phases; density of defect states; electronegativity and average mean bond energy for these polycrystalline alloys.

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Section: Raman Analysismentioning

confidence: 99%

Structure and Optical Properties of Polycrystalline InxSb30 – xSe70 (0 ≤ x ≤ 25) Chalcogenide Alloys

Sharma¹,

Sharma²,

Kumar³

et al. 2016

J. Nano- Electron. Phys.

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“…The presence of any weak band at 138-145 cm −1 is often associated to Se-Se banding vibration mode [31]. For this reason, peak at 140.23 ± 0.65 cm −1 can be attributed and polymeric Se chains (as in trigonal Se with helicoidal chains), respectively [32][33][34][35][36]. For x = 0.08 the peak at 177.22 ± 1.73 cm −1 shifts to 182.69 ± 0.76 cm −1 and for x = 0.12 it shifts to 188.91 ± 1.20 cm −1 whereas peak at 201.88 ± 1.21 cm −1 shifts to 211.46 ± 0.24 cm −1 for x = 0.08 and to 212.57 ± 0.32 cm −1 for x = 0.12.…”

Section: Raman Analysismentioning

confidence: 99%

Study of conduction mechanisms of InSeSb nano-chalcogenide alloys

Thakur,

Rangra

2024

J. Phys.: Condens. Matter

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The electrical conduction mechanisms for bulk samples of In0.1Se0.9-xSbx (x= 0, 0.04, 0.08 and 0.12) nano-chalcogenide system, synthesized by the melt-quenching technique are investigated through current-voltage (I-V) characteristics. For the detailed study of conduction mechanism pellets of bulk samples are prepared. A thorough examination of electrical conductivity is done in the temperature range of 295-318 K and 0-50 V voltage range. From I-V measurements it is observed that samples are showing ohmic nature at lower field and non-ohmic nature at relatively higher field values. The temperature dependence of DC conductivity is analyzed using the Arrhenius relationship which is found to increase with Sb content. The value of activation energy and pre-exponential factor are calculated, which revealed that the conduction is due to the hopping of charge carriers among the localized states. Different parameters of Mott’s variable range hopping such as degree of disorder T0, density of localized states N(EF), hopping distance (Rhop), and hopping energy (W) are calculated. For the high field conduction process Poole-Frenkel, and Schottky processes are studied.

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Structural analysis of quaternary Se85−xSb10In5Agx bulk glassy alloys

Cited by 2 publications

References 10 publications

Structure and Optical Properties of Polycrystalline InxSb30 – xSe70 (0 ≤ x ≤ 25) Chalcogenide Alloys

Structure and Optical Properties of Polycrystalline InxSb30 – xSe70 (0 ≤ x ≤ 25) Chalcogenide Alloys

Study of conduction mechanisms of InSeSb nano-chalcogenide alloys

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