Structural analysis of In/Ag, In/Cu and In/Pd thin films on tungsten by ellipsometric, XRD and AES methods

Non-destructive characterization of In/Ag and In/Cu diffusive layers

“…[18,19]). However, in the lower photon energy range, the line-shape of the dielectric functions is more similar to that of In and this behaviour of ˜ (E) was also found in the previous investigations of In/Ag thin films [18][19][20]. In particular, relatively weak absorption bands between 1.3 eV and 2.3 eV were also observed in the pseudo-dielectric functions of In films.…”

“…This implies a lower intermixing of Ag and In atoms when the silver film is evaporated on the indium underlayer. The AgIn phase revelaed in the present XRD studies was not detected in the diffractograms of thicker In/Ag layers deposited on SiO 2 and W substrates [20].…”

“…In particular, only few papers deal with optical properties of In/Ag and In/Cu films [18][19][20]. Optical methods are increasingly used in thin-film characterization because they are non-contact and nondestructive and the frequency-dependent response of material to an applied electromagnetic field provides the most direct information on the electronic properties of the system.…”

Surface evolution and bonding properties of electroplated Au/Sn/Au

“…This interdiffusion of thin film couples are generally observed in thin film systems prepared by PVD technology in high vacuum chamber such as Sn/Au, In/Au, In/Ag[3,[5][6].…”

“…Formation of intermetallic compounds at room temperature have been studied in several systems such as AulSn, In/Au, In/Ag, In/Cu. [3,5,6]. In AuiSn system, AuiSn thin film couples prepared by PVD were found to interdiffuse at room temperature via both bulk and grain boundary diffusion mechanisms.…”