Structural analysis of high-T c cuprate superconductors

Fung, P. C. W.; Kwok, W. Y.

doi:10.1007/bf00635858

Cited by 11 publications

(10 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The existing experimental facts give evidence that the thermodynamic properties, especially specific heat properties of high-T c cuprate superconductors are very unusual in many respects, both in the superconducting state and in the normal state. In particular, measurements of the specific heat of LSCO and YBCO give clear evidences for the existence of more or less pronounced BCSlike anomalies somewhat above T c or even well above T c [33,59] and a linear term at low temperatures [166]. It seems more likely that the linear term in the lowtemperature specific heat of high-T c cuprates is not an intrinsic property of their superconducting state, but due to the presence of some impurity phases [166].…”

Section: F Specific Heat Anomalies Of High-tc Cuprates In the Normal ...mentioning

confidence: 99%

Microscopic theory of pseudogap phenomena and unconventional Bose-liquid superconductivity and superfluidity in high-$T_c$ cuprates and other systems

Dzhumanov

2019

Preprint

View full text Add to dashboard Cite

In this work, the consistent, predictive and empirically adequate microscopic theory of pseudogap phenomena and unconventional Bose-liquid superconductivity (superfluidity) is presented, based on the fact that in high-Tc cuprates and other related systems the energy εA of the effective attraction between fermionic quasiparticles is comparable with their Fermi energy εF and the bosonic Cooper pairs are formed above Tc (the temperature of the superfluid transition) and then a small part of such Cooper pairs condense into a Bose superfluid at Tc. According to this theory, the doped high-Tc cuprates and other systems with low Fermi energies (εF ∼ εA) are unconventional bosonic superconductors/superfluids and exhibit pseudogap phases above Tc, λ-like superconducting transition at Tc and Bose-liquid superconductivity below Tc. The relevant charge carriers in high-Tc cuprates are polarons which are bound into bosonic Cooper pairs above Tc. Polaronic effects and related pseudogap weaken with increasing the doping and disappear at a quantum critical point where a small Fermi surface of polarons transforms into a large Fermi surface of quasi-free carriers. The modified BCS-like theory describes another pseudogap regime but the superconducting/superfluid transition in high-Tc cuprates and related systems is neither the BCS-like transition nor the usual Bose-Einstein condensation. A good quantitative agreement is found between pseudogap theory and experiment. Universal criteria for bosonization of Cooper pairs are formulated in terms of two fundamental ratios εA/εF and ∆F /εF (where ∆F is the BCS-like gap). The mean-field theory of the coherent single particle and pair condensates of bosonic Cooper pairs describes fairly well the novel superconducting states (i.e., two distinct superconducting A and B phases below Tc and a vortexlike state above Tc) and various salient features (λ-like transition at Tc, kink-like anomalies in all superconducting/superfluid parameters near the first-order phase transition temperature T * c lower than Tc, gapless excitations below T * c and two-peak specific heat anomalies) of high-Tc cuprates in full agreement with the experimental findings. Though Bose-liquid superconductivity in the bulk of high-Tc cuprates is destroyed at Tc, but it can persist above Tc at grain boundaries and interfaces of these materials up to room temperature. The unusual superconducting/superfluid states and properties of other exotic systems (e.g., heavy-fermion and organic compounds, Sr2RuO4, 3 He, 4 He and atomic Fermi gases) are explained more clearly by the theory of Bose superfluids. Finally, the new criteria and principles of unconventional superconductivity and superfluidity are formulated.

show abstract

Section: F Specific Heat Anomalies Of High-tc Cuprates In the Normal ...mentioning

confidence: 99%

Microscopic theory of pseudogap phenomena and unconventional Bose-liquid superconductivity and superfluidity in high-$T_c$ cuprates and other systems

Dzhumanov

2019

Preprint

View full text Add to dashboard Cite

show abstract

“…The geometrical and extracted parameters are summarized in Table I. µ BAND , N C , and F0 are given through previous works [6][7][8], V FB is used as the workfunction difference between Mo and a-IGZO, and C ox is obtained from the C-V measurement. N eff1 , kT eff1 , N eff2 , and kT eff2 were preassumed as appropriate values and finally extracted with the numerical iteration until the calculated I-V and C-V curves are consistent with the measured ones.…”

Section: Parameter Extraction and Model Verificationmentioning

confidence: 99%

P‐203L: Late‐News Poster: Analytical I‐V and C‐V Models for Amorphous InGaZnO TFTs and Their Application to Circuit Simulations

Bae

Kim

et al. 2011

Symp Digest of Tech Papers

View full text Add to dashboard Cite

Analytical current and capacitance models for amorphous Indium-Gallium-Zinc-Oxide Thin film transistors (a-IGZO TFTs) are proposed for application to the simulation of a-IGZO TFT-based circuits. The accuracy of the proposed models are verified by comparing the measured I-V and C-V characteristics with calculated ones and the simulation result of a-IGZO TFT-based circuits. The proposed models are expected to be useful both for the optimization of fabrication process and for the prospective estimation of the effect of process conditions on the circuit performance.

show abstract

“…Also, the ionized donor doping concentration (N D + ) was assumed to be uniformly distributed, which is controlled by the oxygen vacancies (V O ). Here, it should be noted that if necessary (although it is neglected here for simplicity), the donor-like DOS resulting from V O (g OV (E)) can be also easily incorporated into DAOTS C-language module instead of N D + (it was assumed to be Gaussian-distributed in [11]). In addition, the donor-like DOS (g D (E)) was modeled as…”

Section: I-v Model Based On the 1-d Field Solvermentioning

confidence: 99%

“…As the demand for various innovative applications explosively increases, the device model and simulator become more and more indispensable for both the process optimization and the accurate design for maximizing the merits of oxide TFT-based circuits. Considering that the process/structure/layout-dependences of amorphous oxide TFT characteristics cannot be yet fully understood in present, the oxide TFT-oriented model and simulator should have following features, in comparison with the model and simulation works based on commercial technology computer-aided design (TCAD) tools [10][11][12]:…”

Section: Introductionmentioning

confidence: 99%

P‐204L: Late‐News Poster: Subgap Density of States‐Based Amorphous Oxide Thin Film Transistor Simulator (DAOTS) for Process Optimization and Circuit Design

Jeon

Kim

Lee

et al. 2010

Symp Digest of Tech Papers

View full text Add to dashboard Cite

As the oxide TFT‐oriented simulator, the subgap density of states‐ based amorphous oxide TFT simulator (DAOTS) is proposed, implemented, and demonstrated for a‐InGaZnO TFTs. It consists of the parameters having their physical meanings. Moreover, concrete techniques for parameter extraction are supplied. Most preferably, the quantitative self‐consistency with experimental data is guaranteed in DAOTS.

show abstract

Structural analysis of high-T c cuprate superconductors

Cited by 11 publications

References 19 publications

Microscopic theory of pseudogap phenomena and unconventional Bose-liquid superconductivity and superfluidity in high-$T_c$ cuprates and other systems

Microscopic theory of pseudogap phenomena and unconventional Bose-liquid superconductivity and superfluidity in high-$T_c$ cuprates and other systems

P‐203L: Late‐News Poster: Analytical I‐V and C‐V Models for Amorphous InGaZnO TFTs and Their Application to Circuit Simulations

P‐204L: Late‐News Poster: Subgap Density of States‐Based Amorphous Oxide Thin Film Transistor Simulator (DAOTS) for Process Optimization and Circuit Design

Contact Info

Product

Resources

About