2000
DOI: 10.1016/s0040-6090(00)00886-5
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Structural analysis of alumina films produced by two-step electrochemical oxidation

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Cited by 29 publications
(15 citation statements)
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“…Then, the glass slide was electrochemically anodized to form porous Al 2 O 3 . As reported in previous studies, the anodic aluminum oxide grown at room temperature possesses amorphous structure [65,[69][70][71][72]. After anodization, the samples were etched to increase the porosity.…”
Section: Aao Coating Sample Preparationmentioning
confidence: 99%
“…Then, the glass slide was electrochemically anodized to form porous Al 2 O 3 . As reported in previous studies, the anodic aluminum oxide grown at room temperature possesses amorphous structure [65,[69][70][71][72]. After anodization, the samples were etched to increase the porosity.…”
Section: Aao Coating Sample Preparationmentioning
confidence: 99%
“…A recent study of porous alumina films formed in phosphoric [275,292], oxalic [293] and sulfuric [291] acids, showed that the originally formed anodic porous alumina films are definitely amorphous. On the other hand, anodizing in chromic acid can result in amorphous alumina with traces of g-Al 2 O 3 [291].…”
Section: Crystal Structure Of Oxidementioning
confidence: 99%
“…Recently, the mixing of both galvanostatic and potentiostatic regimes has been reported as a new and efficient method for the high-field anodization of aluminum [213,223,251,293,339]. The sample was pre-anodized at a constant current density and, after a certain period of time and after reaching a specified potential, the potentiostatic mode was switched.…”
Section: Anodizing Regimes and Current/potential-time Transientmentioning
confidence: 99%
“…One of the most important methods for the preparation of 1D nanoscale materials is the template technique, which uses nanoporous membranes as templates [2][3][4]. In this method, anodic aluminum oxide membranes (AAO), prepared by electrochemical etching of aluminum foil in oxalic, sulfuric, and phosphoric acid solutions are the membranes most commonly used [5][6][7][8][9][10] for the fabrication of semiconductor nanowires, superconductor nanowire arrays, carbon nanotube arrays, etc. These materials have been fabricated mainly by electro [11][12][13] and electroless [14] deposition, chemical vapor deposition [15], and sputtering or evaporating of the material on the surface of the AAO at high temperatures [16,17]; however, attempts to fill the pores by gravity alone have resulted unfruitful.…”
Section: Introductionmentioning
confidence: 99%