Structural Analysis of Ag–In–Sb–Te Phase-Change Material

Tashiro, Hiroko; Harigaya, Makoto; Kageyama, Yoshiyuki; Itô, Kazunori; Shinotsuka, Michiaki; Tani, Kotaro; Watada, Atsuyuki; Yiwata, Noriyuki; Nakata, Yoshiyuki; Emura, S.

doi:10.1143/jjap.41.3758

Cited by 33 publications

(19 citation statements)

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“…From one point of view, tellurium is unwanted admixture in silver and has to be removed during refining process [1]. From the other, quaternary Ag-In-Sb-Te system is widely used for making phase-change discs such as compact disc rewritable (CD-RW) and rewritable digital versatile disc (DVD+RW) [2,3]. Binary Ag-Te system is also very important in mineralogy because the knowledge of the phases stability may be useful in the interpretation of the formation of ore deposits [4].…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic assessment of the Ag–Te binary system

Gierlotka

2009

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Thermodynamic assessment of the Ag–Te binary system

Gierlotka

2009

Journal of Alloys and Compounds

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“…It means that the amorphous state will be thermally stabilized by the existence of Ag. 14) However, the appearance of the AgSbTe 2 phase in the crystalline AIST films did not further change the sheet resistance as compared with the crystalline ST films, which indicates the minor effect of the AgSbTe 2 phase on the electrical resistivity.…”

Section: Electrical Properties Of Aist and St Filmsmentioning

confidence: 86%

“…[6][7][8][9][10][11][12][13] Besides, previous studies have reported that SbTe films with Ag and In additives have a higher crystallization temperature and better stability than the SbTe binary system. 14) Hence, this study aims to investigate the electrical properties for both SbTe and AgInSbTe films in association with the microstructural characteristics before and after heat treatment. The differences between SbTe and AgInSbTe films were discussed.…”

Section: Introductionmentioning

confidence: 99%

Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization

2007

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Two kinds of chalcogenide films with similar Sb/Te atomic ratios, AgInSbTe (AIST) and SbTe (ST) were deposited on alkali-free glass using the RF sputtering method. The microstructure characteristics of both ST and AIST films were demonstrated to correlate with the electrical properties. TEM observation and GI-XRD profiles revealed that the structures of as-deposited AIST and ST films were amorphous characteristics. The sheet resistance of the as-deposited AIST films was twice as high as that of ST films and the effect of Ag and In additives was proposed. After annealing at 523 K for 1 h, the sheet resistance of both chalcogenide films decreased by four orders of magnitude due to crystallizations and the sheet resistance of crystallized AIST film was still twice as large as that of crystallized ST film. DSC measurement was used to determine the crystallization temperature of AIST films as 476 K and that of ST films as 445 K. The activation energies of crystallization were determined using Kissinger's method, and 0.94 eV and 0.84 eV were obtained for AIST and ST films, respectively. TEM observations showed that AgSbTe 2 phase exists in the AIST film after heat treatment in addition to -Sb phase. No indium compounds were discovered in the AIST film by the energy dispersive spectroscopy (EDS) and XRD measurements.

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“…The activation energy of crystallization for -Sb phase can attribute to the movement of Sb and Te atoms in a short range and the rearrangements in the crystalline structures because the lattice site is occupied by all the constituent elements at random. [20][21][22] The additives of Ag and In have also been proven to increase the activation energy of crystallization. 5,23,24) Consequently, the activation energy of -Sb crystallization can be affected by the following factors: rearrangement of the Sb atoms, diffusion in a short range and the additive atom as an obstacle to the movement of the Sb or Te atoms.…”

Section: Electrical Properties Of Aist Filmsmentioning

confidence: 99%

Activation Energy of AgInSbTe Film through Isothermal Sheet Resistance Measurements

2007

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RF sputtering was used to deposit AgInSbTe (AIST) films on silicon substrates. The as-deposited amorphous films were crystallized at temperatures above 413 K and the sheet resistance change was used to characterize the degree of crystallization and the associate activation energy in this study. The sheet resistance of amorphous films quickly decreased when the crystallization was initiated and reached a steady lower value with the IOC index of around 0.7, which means 70% crystallization. The kinetics of sheet resistance change was researched isothermally in an argon atmosphere and compared to the results of DSC measurement with constant heating rates. It was found that activation energy, 0.82 eV, obtained from isothermal sheet resistance measurement was rather close to that, 0.92 eV, obtained from DSC measurement. The Avrami exponent was determined to be 1:1$1:4 in isothermal sheet resistance measurement. A lower Avrami exponent implied that impingement effects possibly resulted in the sheet resistance decreasing with about 78% crystallization of amorphous films.

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Structural Analysis of Ag–In–Sb–Te Phase-Change Material

Cited by 33 publications

References 1 publication

Thermodynamic assessment of the Ag–Te binary system

Thermodynamic assessment of the Ag–Te binary system

Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization

Activation Energy of AgInSbTe Film through Isothermal Sheet Resistance Measurements

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