Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice

Dussaigne, Amélie; Barbier, F.; Samuel, B.; Even, Armelle; Templier, R.; Lévy, François; Ledoux, Olivier; Rozhavskaia, M.; Sotta, D.

doi:10.1016/j.jcrysgro.2020.125481

Cited by 24 publications

(20 citation statements)

References 34 publications

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“…The InN mole fraction x of the In x Ga 1-x N thin layers was 4%. This buffer layer has the advantage to improve the material quality of the InGaN based overgrown layer and to cover the V pits originated from the InGaNOS substrate [28]. This has also been demonstrated…”

Section: Methodsmentioning

confidence: 92%

“…Some Vshaped defects are present on its surface but it has been shown that an engineered InGaN/GaN superlattice based buffer layer can manage the filling of these V pits [28]. It has also been demonstrated that the whole visible spectrum can be covered with thin InGaN/InGaN MQWs grown on this substrate, from blue to red emission, until 624 nm [28], by choosing the appropriate a lattice parameter and/or by adapting the growth conditions [17]. Then, a new LED structure, called the full This is the author's peer reviewed, accepted manuscript.…”

Section: Introductionmentioning

confidence: 99%

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Full InGaN red light emitting diodes

Dussaigne

Barbier

Damilano

et al. 2020

Journal of Applied Physics

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The full InGaN structure is used to achieve red light emitting diodes (LEDs). This LED structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec, namely InGaNOS, a ndoped buffer layer formed by a set of In x Ga 1-x N/GaN superlattices, thin In y Ga 1-y N/In x Ga 1-x N multiple quantum wells, and a p doped In x Ga 1-x N area. p-doped InGaN layers are first studied to determine the optimal Mg concentration. In the case of an In content of 2%, an acceptor concentration of 1x10 19 /cm 3 was measured for a Mg concentration of 2x10 19 /cm 3 . Red electroluminescence was then demonstrated for two generations of LEDs, including chip sizes of 300x300 and 50x50 µm². The differences between these two LED generations are detailed. For both devices, red emission with a peak wavelength at 620 nm was observed for a pumping current density of 12 A/cm². Red light-emission is maintained over the entire tested current range. From the first to the second LED generation, the maximum external quantum efficiency, obtained in the range of 17 to 40 A/cm², was increased by almost one order of magnitude (factor 9) thanks to the different optimizations.

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Section: Methodsmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Full InGaN red light emitting diodes

Dussaigne

Barbier

Damilano

et al. 2020

Journal of Applied Physics

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“…The micro-LED array in this study had a resolution of 16 × 16, and the pixel diameter and center spacing were 72 μm and 100 μm, respectively. The authors used a flip-chip design to bond the micro-LED on a CMOS substrate and achieved a programmable dynamic In 2020, Dussaigne et al experimentally proved that the deposition of an InGaN/GaN superlattice structure on an InGaNOS pseudo-substrate has the potential to fill surface V defects and further improve the crystal quality on InGaNOS [103]. The team used this structure to prepare a red-emitting MQW on InGaNOS and measured its center wavelength at 624 nm with an IQE of 6.5% estimated from the ratio of the PL intensities measured at 20 and 290 K.…”

Section: Monolithic Wavelength Tunable Mqw Micro-ledsmentioning

confidence: 99%

“…In 2020, Dussaigne et al experimentally proved that the deposition of an InGaN/GaN superlattice structure on an InGaNOS pseudo-substrate has the potential to fill surface V defects and further improve the crystal quality on InGaNOS [ 103 ]. The team used this structure to prepare a red-emitting MQW on InGaNOS and measured its center wavelength at 624 nm with an IQE of 6.5% estimated from the ratio of the PL intensities measured at 20 and 290 K.…”

Section: Monolithic Multi-color Growth Technologymentioning

confidence: 99%

Full-Color Realization of Micro-LED Displays

et al. 2020

Nanomaterials

140

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Emerging technologies, such as smart wearable devices, augmented reality (AR)/virtual reality (VR) displays, and naked-eye 3D projection, have gradually entered our lives, accompanied by an urgent market demand for high-end display technologies. Ultra-high-resolution displays, flexible displays, and transparent displays are all important types of future display technology, and traditional display technology cannot meet the relevant requirements. Micro-light-emitting diodes (micro-LEDs), which have the advantages of a high contrast, a short response time, a wide color gamut, low power consumption, and a long life, are expected to replace traditional liquid-crystal displays (LCD) and organic light-emitting diodes (OLED) screens and become the leaders in the next generation of display technology. However, there are two major obstacles to moving micro-LEDs from the laboratory to the commercial market. One is improving the yield rate and reducing the cost of the mass transfer of micro-LEDs, and the other is realizing a full-color display using micro-LED chips. This review will outline the three main methods for applying current micro-LED full-color displays, red, green, and blue (RGB) three-color micro-LED transfer technology, color conversion technology, and single-chip multi-color growth technology, to summarize present-day micro-LED full-color display technologies and help guide the follow-up research.

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“…V-defects widen, expanding in size, depending on growth conditions used [15], leading to poor morphology as the material continues to grow epitaxially. Uncontrolled propagation of V-defects during growth creates large-scale defect regions of material [16], which would likely preclude a working device. Since the growth substrates employed here are fabricated from an epitaxially grown InGaN film, they natively contain V-defects, which will increase in size during growth.…”

Section: Introductionmentioning

confidence: 99%

Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers

et al. 2021

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We examine full InGaN-based microLEDs on c-plane semi-relaxed InGaN substrates grown by metal organic chemical vapor deposition (MOCVD) that operate across a wide range of emission wavelengths covering nearly the entire visible spectrum. By employing a periodic InGaN base layer structure with high temperature (HT) GaN interlayers on these semi-relaxed substrates, we demonstrate robust μLED devices. A broad range of emission wavelengths ranging from cyan to deep red are realized, leveraging the indium incorporation benefit of the relaxed InGaN substrate with an enlarged lattice parameter. Since a broad range of emission wavelengths can be realized, this base layer scheme allows the tailoring of the emission wavelength to a particular application, including the possibility for nitride LEDs to emit over the entire visible light spectrum. The range of emission possibilities from blue to red makes the relaxed substrate and periodic base layer scheme an attractive platform to unify the visible emission spectra under one singular material system using III-Nitride MOCVD.

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Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice

Cited by 24 publications

References 34 publications

Full InGaN red light emitting diodes

Full InGaN red light emitting diodes

Full-Color Realization of Micro-LED Displays

Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers

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