2009
DOI: 10.1021/cm902483a
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Strongly Correlated Properties and Enhanced Thermoelectric Response in Ca3Co4−xMxO9 (M = Fe, Mn, and Cu)

Abstract: We report the strongly correlated, electrical transport, magnetic, and thermoelectric properties of a series of Fe, Mn, and Cu doped Ca 3 Co 4 O 9 . The results indicate that Fe/Mn substitutes for Co in CoO 2 layers whereas Cu substitutes for Co in Ca 2 CoO 3 layers. Because of the different doping sites, the electronic correlations increase remarkably in Fe and Mn doped series while remaining unchanged in Cu doped series. Correspondingly, the transport mechanism, magnetic properties, and some characteristic p… Show more

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Cited by 143 publications
(203 citation statements)
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“…Now we stress that this is consistent with our resistivity results. In this system, the resistivity minimum around 70 K is associated with an onset of SDW gap formation [41,42]. Therefore, according to above scenario, the onset temperature should increase with increasing Rh content.…”
Section: Discussionmentioning
confidence: 84%
“…Now we stress that this is consistent with our resistivity results. In this system, the resistivity minimum around 70 K is associated with an onset of SDW gap formation [41,42]. Therefore, according to above scenario, the onset temperature should increase with increasing Rh content.…”
Section: Discussionmentioning
confidence: 84%
“…Such performances are believed to be a result of Ca 3 Co 4 O 9?d crystallographic structure, consisting of two misfit layers: the CaO-CoOCaO rocksalt-type layer and the CdI 2 -type CoO 2 layer [5]. Ca 3 Co 4 O 9?d polycrystals, on the other hand, still exhibits lower performances, with ZT \ 0.3 [6][7][8][9][10]. This has to be improved before it can be implemented for any real applications.…”
Section: Introductionmentioning
confidence: 99%
“…To further examine the impurity effect, we compare two characteristic lengths, ξ 0 and ξ imp . Using the carrier concentration n ≃ 6 × 10 21 cm −3 [30] and the effective mass m * ≃ 13m 0 [31], ξ 0 is calculated as ξ 0 ≃ 4 nm. On the other hand, ξ imp is estimated as ξ imp ≃ 4 nm for x = 0.1 sample [32], comparable to ξ 0 , indicating that the impurities certainly affect the temperature dependence of the threshold field in this system.…”
Section: Resultsmentioning
confidence: 99%