Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI₂ Layers

Abstract

Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D "slidetronics". Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX 2 (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr 2 and HgI 2 in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI 2 layers possess strong sliding ferroelectricity up to 0.16 μC/cm 2 , readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI 2 layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime.