Strong Rashba Effect and Different f−d Hybridization Phenomena at the Surface of the Heavy‐Fermion Superconductor CeIrIn₅

Abstract

New temperature scales and remarkable differences from bulk properties have increasingly placed the surfaces of strongly correlated f materials into the focus of research activities. Applying first-principles calculations and angle-resolved photoelectron spectroscopy measurements, a strong Rashba effect and spinsplit surface states at the CeIn surface of the heavy-fermion superconductor CeIrIn 5 are revealed. The unveiled 4f-derived electron landscape is remarkably distinct for surface and bulk Ce implying the existence of novel temperature scales near the surface region in this material. These results show that ab initio calculations can reliably predict the unusual electronic and spin structure of surfaces of strongly correlated 4f systems where Rashba spin-orbit-coupling phenomena emerge. It is suggested that the structural blocks of such materials can be combined with magnetically active layers for engineering of novel nanostructural objects with appropriate substrates where the diversity of f-driven properties can be applied for the development of novel functionalities.

Electronic states dressed by an out-of-plane supermodulation in the quasi-two-dimensional kagome superconductor CsV3Sb5

“…S5 and S6 [45]; see, also, Refs. [54,55] therein). Another potential candidate is the 3D CDW reported in CsV 3 Sb 5 [4][5][6][7]29], which can provide the out-of-plane scattering channel below the CDW transition temperature.…”

A 2D heavy fermion CePb3 kagome material on silicon: emergence of unique spin polarized states for spintronics

“…2(a)], though the position of the flat band coincides with the 4f state observed experimentally in Ce-containing compounds, including the CeSi x /Si(111) film 33 and CeIrIn 5 . 69,70 The reason of discrepancy between experimental and calculated spectra (the absence of a flat f-electron band in ARPES) is not high enough excitation energy used to obtain ARPES data. The photon energy dependence of photoionization cross-section differs significantly for the p and f orbitals.…”

Unveiling the stacking-dependent electronic properties of the 2D ultrathin rare-earth metalloxenes family LnX2 (Ln = Eu, Gd, Dy; X = Ge, Si)

“…4(f)). Therefore, the study of magnetism-induced effects on the electronic band structure of LnX 2 metalloxenes shows the pivotal role of Ln f-d hybridization, 40,41 which can be effectively tuned by modification of the interface. The increase in film thickness up to 2 ML leads to a substantial decrease in the exchange splitting in the electronic spectra of the GdSi 2 films regardless of the type of stacking due to anti-parallel alignment of the magnetic moments in the neighboring layers (Fig.…”