Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)

Weber, A.; Gauthier-Lafaye, Olivier; Julien, F. H.; Brault, J.; Gendry, M.; Désières, Y.; Benyattou, T.

doi:10.1063/1.123045

Cited by 90 publications

(35 citation statements)

References 15 publications

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“…At the same time, there is experimental evidence that these effects influence the properties of the studied objects at higher temperatures, up to room temperature. In particular, the intraband-interlevel absorption of infrared radiation with a frequency of 500-800 cm -1 was observed in [31] at 77 and 300 K on arrays of InAs/InAlAs quantum dots grown on the InP(001) substrate. Simulating the kinetics of polariton states in GaN-based microcavities (quantum wells), Malpuech et al [37] (see also references in that work) showed the possibility of a laser effect on such structures at 300 K. More recently, the emission of coherent radiation was experimentally observed in GaAs/GaAlAs column microcavities at 10 K [38] and in structures with microcavities on GaN quantum wells at 300 K [39].…”

Section: Doi: 101134/s0021364010240033mentioning

confidence: 99%

“…The experiments concerning infrared spectroscopy and photoinduced absorption in magnetic fields and without magnetic field exhibit resonance caused by the transitions between quantized energy levels inside quantum dots and quantum wells, as well as between the split levels and the continuum of the valence or conduction band [6,[29][30][31][32]. Carriers localized inside quantum dots can form bound states with the carriers in the continuum (excitons) or with LO phonons (polarons), which can in turn interact with each other and form collective complexes [4-6, 25, 30-32].…”

Section: Doi: 101134/s0021364010240033mentioning

confidence: 99%

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Absorption of terahertz radiation in Ge/Si(001) heterostructures with quantum dots

et al. 2010

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The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the detected increase in the absorption in arrays of quantum dots have been discussed. DOI: 10.1134/S0021364010240033Artificial low-dimensional nanoobjects-quantum wells, quantum wires, and quantum dots-as well as structures based on them, are promising systems for improvement of existing devices and development of fundamentally new devices of micro and optoelectronics [1]. In addition to the necessity of the development of new technological processes and equipment for manufacturing nanostructures with required parameters, the investigation of the fundamental properties of such structures is also of primary importance. Size quantization of the energy of charge carriers whose spatial motion is limited at scales of about 100 nm or smaller is one of the most striking such properties. In particular, a quantum dot is a zero dimensional object can be considered as an artificial atom with one or more charge carriers (electrons or holes) having a discrete energy spectrum [2]. Arrays of a large number of quantum dots including multilayer heterostructures make it possible to form artificial "solids" whose properties can be controllably changed by varying the characteristics of constituent elements ("atoms") and the environment (semiconductor matrix). Such systems can have a very rich set of physical properties, which are caused by single-particle and collective interactions and depend on the number and mobility of carriers in quantum dots, Coulomb interaction between the carriers inside a quantum dot and in neighboring quantum dots, charge coupling between neighboring quantum dots, polaron and exciton effects, etc. These properties are actively studied during the last two decades. One of the main tools for such investigations is infrared spectroscopy, whose advantages are the contactless character of the measurements and the possibility of the direct observation of transitions between quantized energy states. The specificity of the infrared region is that almost all main interactions in low-dimensional nanostructures (distance between levels, Coulomb interaction between charges in quantum dots, one and multi-particle exciton and polaron effects, plasmon excitations) have the corresponding characteristic energies from several meV to 50-100 meV [3][4][5][6][7].It is worth noting that almost all performed infrared spectroscopy experiments were devoted to the measurement of the relative characteristics (e.g., relative tra...

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Section: Doi: 101134/s0021364010240033mentioning

confidence: 99%

Section: Doi: 101134/s0021364010240033mentioning

confidence: 99%

Absorption of terahertz radiation in Ge/Si(001) heterostructures with quantum dots

et al. 2010

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“…To date, IR absorption peaks were observed mostly from the InAs QDs embedded in GaAs substrates, with their peaks ranging from 10 µm to 14 µm [12,13,15,16]. On the other hand, only a few results were reported on the IR characteristics of the QD structures grown on InP substrates [11,14,17]. InAs/InP QDs have been regarded as one of the promising material systems for the fabrication of QDIPs, as well as for fiber-optic devices.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of InAs/InP quantum dot stack grown by metalorganic chemical vapor deposition

Hwang

Park

Kang

et al. 2003

phys. stat. sol. (c)

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The 5-layer InAs quantum dot (QD) stack was grown on an (001) InP substrate by low pressuremetalorganic chemical vapor deposition. 40 nm InP spacer layers were inserted between the InAs QDs. The integrated intensity of the photoluminescence peak at 300 K was over 12% of that at 10 K. Farinfrared absorption peaks were observed at 819 cm −1 (101.64 meV) and 518 cm −1 (64.08 meV) from this structure at room temperature by attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Raman analysis showed that the peak at 819 cm −1 was attributed to a plasmon related peak in the n-type InP substrate. The absorption peak at 518 cm −1 was regarded as a peak related with intersubband transition in the InAs QDs, suggesting that room temperature operating quantum dot devices may be fabricated.

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“…Also, In 0.4 Ga 0.6 As/GaAs QDs have been used in three-color QDIPs, demonstrating IR responses at 3.5, 7.5, and 22 µm for different bias voltages [21]. Other III-V material systems under investigation include InAs/InP QDs [75] and InAs/InAlAs QDs [76] grown on InP substrates and InGaAs/InGaP QDs grown on GaAs substrates [77]. Recent results have demonstrated a mid-IR QDIP (4.7 µm) using In 0.68 Ga 0.32 As/In 0.49 Ga 0.51 P QDs grown on GaAs substrates by MOCVD [78].…”

Section: Alternative Qd Materials Systemsmentioning

confidence: 99%

Quantum-dot infrared photodetectors: a review

Stiff‐Roberts

2009

J. Nanophoton

100

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Abstract. Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (≥150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot nonuniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.Keywords: InAs/GaAs quantum dots, colloidal quantum dots, quantum-dot infrared photodetectors, QDIP focal plane arrays.

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Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)

Cited by 90 publications

References 15 publications

Absorption of terahertz radiation in Ge/Si(001) heterostructures with quantum dots

Absorption of terahertz radiation in Ge/Si(001) heterostructures with quantum dots

Optical properties of InAs/InP quantum dot stack grown by metalorganic chemical vapor deposition

Quantum-dot infrared photodetectors: a review

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