Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

Czyszanowski, Tomasz; Sarzała, Robert P.; Dems, Maciej; Thienpont, Hugo; Nakwaski, W.; Panajotov, Krassimir

doi:10.1002/pssa.200824499

Cited by 15 publications

(18 citation statements)

References 36 publications

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“…Therefore usually the simplest VCSEL structures should be recommended, including small−area devices, somewhat more advanced VCSELs using tunnel junctions and inverted−relief VCSELs. For very special applications requiring more stable and more efficient SFM VCSEL performance, various holey structures may be con− sidered including the most promising photonic−crystal VCSELs of possibilities still not fully discovered and exploited [62][63][64]. Even higher SFM output may be reached in VCSELs integrated with curved microlenses.…”

Section: Discussionmentioning

confidence: 99%

“…The highest RT SFM output obtained in PC VCSELs equals 3.8 mW in the 10−μm device [58] emitting the 996−nm radiation and its lower RT threshold current was equal to only 0.9 mA (1.15 kA/cm 2 ). PC VCSELs are very promising devices potentially offering relatively high SFM outputs, but their development has just been started, so they need more time necessary for their modelling and structure optimization [62][63][64] to reach an essential improvement.…”

Section: Diffraction Lossesmentioning

confidence: 99%

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VCSEL structures used to suppress higher-order transverse modes

Nakwaski

2011

Opto-Electronics Review

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Currently unwanted excitation of higher-order transverse modes is the most serious drawback of vertical-cavity surface-emitting diode lasers (VCSELs) limiting their possible applications. In the present paper, various methods used to suppress those modes are described and their effectiveness is compared. It is well known that, because of a nearly uniform current injection into their active regions, small-aperture VCSELs without any modification offer quite high single-fundamental-mode (SFM) output. However, their series resistance is often too high, which aggravates their high-modulation performance. Similarly uniform current injection may be also achieved with the aid of a tunnelling junction. Generally, methods suppressing higher-order modes take advantage of higher optical gain within the central part of the active region, higher radiation losses outside this region and/or higher central mirror reflectivity. Currently, applications of a tunnel junction, an impurity-induced disordering or an inverted shallow surface relief seem to be the simplest and the most effective methods. The deep etched holey structure or the ARROW structure enable obtaining similar single-mode output powers but they may be used in special cases only because of their complex technology. Photonic crystals may probably enable more advanced mechanisms of suppressing higher-order modes in future because currently their application seems to be still far from being optimised.

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Section: Discussionmentioning

confidence: 99%

Section: Diffraction Lossesmentioning

confidence: 99%

VCSEL structures used to suppress higher-order transverse modes

Nakwaski

2011

Opto-Electronics Review

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“…Recently, a number of experimental [6][7][8] and theoreti− cal studies on PhC VCSELs have been presented [9][10][11][12][13][14][15], however, only in Refs. 10 and 14 the thermal effects taking part in the PhC VCSEL operation has been considered with a special care.…”

Section: Introductionmentioning

confidence: 99%

“…PhC region consists of air holes defined by lower thermal conductivity than semiconductor material. Deep etching hampers the heat transfer but also reduces the threshold current [15]. On the other hand, for shallow etch− ing, one gets rid of heat transport problem but there arises another one connected with light leakage through PhC holes [15].…”

Section: Introductionmentioning

confidence: 99%

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Thermal properties and wavelength analysis of telecom oriented photonic-crystal VCSELs

Czyszanowski

2010

Opto-Electronics Review

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Results of the self-consistent comprehensive analysis of a room-temperature operation of InP-based 1300-nm AlInGaAs photonic-crystal (PhC) VCSELs are presented. In particular, an influence of PhC parameters on thermal effects within VCSEL volume and its emission wavelength are analysed. The PhC has been found to introduce a number of opposite effects including a possible light leakage through PhC holes. From one side, PhC holes make more difficult heat-flux extraction from VCSEL volume leading to higher temperature increases within it. But, from the other side, a properly manufactured PhC creates an efficient radial confinement mechanism for VCSEL radiation field. It enhances an interaction between the field and the active-region carriers leading to a decrease in both the VCSEL lasing threshold and temperature increases. Seemingly both effects may similarly affect VCSEL operation, but our analysis revealed, that thermal properties of the PhC VCSEL are mainly dependent on an efficient confinement of its radiation field within the active region impeding a mode leakage through PhC holes, whereas an importance of deterioration of heat-flux extraction from VCSEL volume is much less essential. The wavelength shift induced by a change of PhC parameters has been found not to exceed 4×10−3 µm.

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