Strong element dependence of C 1s and Si 2p X-ray photoelectron diffraction profiles for identical C and Si local geometries in β-SiC

Juillaguet, Sandrine; Kübler, L.; Diani, Mustapha; Bischoff, J.L.; Gewinner, G.; Wetzel, P.; Bécourt, N.

doi:10.1016/0039-6028(95)00676-1

Cited by 20 publications

(13 citation statements)

References 16 publications

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“…5͑b͔͒, the peak maximum is slightly shifted as already observed on ␤-SiC. 10 The forward scattering peak at ϭ0°is more intense for the XPD modulation of the Si 2p than for the C 1s. These patterns are XPD fingerprints of the 6H-SiC͑0001͒ face ͑Si bulk termination͒.…”

Section: B Thermal Oxide Growthsupporting

confidence: 55%

X-ray spectroscopy of the oxidation of 6H-SiC(0001)

et al. 1999

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Chemically abrupt SiO 2 /6H-SiC(0001) interfaces have been obtained after thin ͑Х5 nm͒ oxide thermal growth of the Si-terminated face. The originality of the paper resides in a simultaneous use of standard technological conditions for this oxidation ͑dry O 2 oxidation at 1 atmosphere and 1000°C͒ and in control and characterization of the starting substrates taken from in situ, ultrahigh vacuum-surface techniques. The oxidation of 3ϫ3 Si-rich and 6)ϫ6)R30°C-rich reconstructed surfaces is compared. In both cases no C-C bonds or C enrichment are observed at the SiO 2 /SiC interface by x-ray photoelectron spectroscopy C 1s analysis, the C-C bonds of the initially graphitized C-rich surface being removed during the first nanometer oxide growth. The interfacial suboxide components with binding energy between the substrate and SiO 2 Si 2p features remain below our detection limit. X-ray photoelectron diffraction analyses indicate that, below the oxide layer, the ordering and polarity of the 6H-SiC͑0001͒ are maintained. These results allow us to conclude that there is probably no fundamental contraindication to obtain nearly ideal SiO 2 /SiC interfaces on flat SiC terraces. Two growth regimes are observed in the oxide growth kinetics. They are discussed to determine the possible reasons of carbon exodiffusion or previously observed C enrichments at the SiO 2 /SiC interface.

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Section: B Thermal Oxide Growthsupporting

confidence: 55%

X-ray spectroscopy of the oxidation of 6H-SiC(0001)

et al. 1999

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“…2͑d͔͒. The experimental value 8 of anisotropy for the same polar angle on SiC single crystals is 43%. From the values in our experiment we can conclude that in the C:Si phase local zinc-blende order coexists with amorphous regions, therefore having a coexistence of ␤-SiC͑001͒ clusters on Si͑001͒ with an amorphous SiC phase.…”

Section: Resultsmentioning

confidence: 87%

“…The kinetic energies of the Mg K ␣ excited C1s and Si 2p photoelectrons, 970 and 1154 eV, respectively, are high enough to guarantee a direct interpretation of the XPD patterns. 7,8 Intensity maxima occur for emission angles corresponding to emitter-scatterer directions, atomic chains, or high density atomic planes. This phenomenon, known as forward focusing, makes the technique a unique structural tool which is able to probe the average local order around selected emitters near the surface.…”

Section: Introductionmentioning

confidence: 99%

A chemical state resolved x-ray photoelectron diffraction study: Initial stages in diamondlike carbon film deposition

Agostino

Küttel

Aebi

et al. 1996

Journal of Applied Physics

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The structural sensitivity of x-ray photoelectron diffraction is greatly enhanced by the acquisition of a full hemispherical diffraction pattern of chemically shifted core levels. Complex systems can be studied resolving the local order per element and per chemical environment. This technique is applied to study the earliest stages of hydrogenated diamondlike carbon film deposition on Si͑001͒. Effects of the sample temperature and ion dose on the structure of deposited layers are discussed.

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“…For single crystals the photoelectron signals show strong intensity modulation as a function of the emission angle, because the photoelectron signal intensity depends on the relative geometric location of all emitters and scatterers as well as on their atomic environment [25,26]. Due to the observed strong element dependence of the XPD spectra in the case of SiC the crystallographic polarity of the surface, being either C-face (3C-SiC(111)) or Si-face (3C- Si(1 1 1)) in the case of SiC(1 1 1) [25,26], or the termination of the 3C-SiC(1 0 0) [39] can be determined. The polarity of the epitaxial layers grown on differently prepared pseudosubstrates can be determined by measuring the Si 2p/C 1s photoelectron intensity ratio along {1 1 1} directions, i.e.…”

Section: Polarity Determinationmentioning

confidence: 97%