Strong electro-optically active Ni-substituted Pb(Zr_0.35Ti_0.65)O₃ thin films: toward integrated active and durable photonic devices

Abstract

Ferroelectric materials for precise control of light from lasers to optical communications have sparked great interest owing to their large electro-optic (EO) coefficients, low propagation loss, and fast switching time.

Chemical design of barium titanate thin films for nanophotonic devices

“…Figure 6D demonstrates the Pockels coefficient r c as the testing temperature increases from 25 • C to 80 • C. Notably, the EO values of BT and BTH exhibit a slight increase, whereas that of BPT is almost invariant, which is similar to that of the PZT thin film. 15 Apparently, BPT thin films exhibit highest EO coefficient among all the studied thin films and temperature independence of the EO coefficients, which are very attractive for optical device application. Generally, the EO properties are closely related to spontaneous polarization and the dielectric constant.…”

“…The frequency stability of the BPT thin films is also much better than that of the other EO thin films such as KNN (49.5 %) and PLZT (55.0 %), and is comparable to that of leadfree (1−x)Ba(Zr,Ti)O 3 −x(Ba,Ca)TiO 3 (BZT-BCT, 80 %) and Ni-doped PZT (80.3 %). 15,24,53 Figure 7A displays the effects on the size of the domains in BT thin films due to cation transmutation. Apparently, the incorporation of other atom (La +3 , Pb +2 , Hf +4 ) to the A-or B-site of the ABO 3 -lattice distorts its long-range order and significantly increases the degree of disorder of the perovskite structure, resulting in a decrease in domain size.…”

“…Notably, perovskite oxides with the ABO 3 structure can be doped with different elements via A or B site substitution to meet particular requirements, especially their EO performances. 14,15 More importantly, long-term stability and reliability of EO devices depends strongly on the perovskite structure, which can be predicted using the Goldschmidt tolerant factor (t). In general, the stability of one perovskite structure is associated with its chemical formula and ironic radii: t = (r A +r B )/1.414(r B +r O ).…”

“…Apparently, larger r c means more energy‐efficient and compact integrated photonic devices. Notably, perovskite oxides with the ABO 3 structure can be doped with different elements via A or B site substitution to meet particular requirements, especially their EO performances 14,15 . More importantly, long‐term stability and reliability of EO devices depends strongly on the perovskite structure, which can be predicted using the Goldschmidt tolerant factor ( t ).…”

Effect of Ni doping on the electro-optic property in K(Ta0.6Nb0.4)O3 films

“…[1][2][3][4][5][6][7] In general, the optical wave phase changes resulted from a variation in the refractive index by an electric field, including linear Pockels and quadratic Kerr effect. 8,9) The larger EO response brings more compact and the less power consumption. LiNbO 3 (LNO) with Pockels coefficient, r c , of around 30 pm V −1 is well known as the conventional LNO-based EO devices which achieves high speed and wideband modulation.…”