Strong coupling between a photon and a hole spin in silicon

Yu, Cécile X.; Zihlmann, Simon; Abadillo-Uriel, J. C.; Michal, V. P.; Rambal, N.; Niebojewski, Heimanu; Bédécarrats, Thomas; Vinet, M.; Dumur, Étienne; Filippone, Michele; Bertrand, Benoît; Franceschi, S. De; Niquet, Yann-Michel; Maurand, Romain

doi:10.1038/s41565-023-01332-3

Cited by 43 publications

(30 citation statements)

References 35 publications

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“…As discussed below, there is some progress in this direction with Ge nanowires. Most notably, however, strong spin-photon coupling has been reported in a recent experiments based on a Si nanowire transistor [22]. More details will be given in the next subsection (on Si devices).…”

Section: Hole-spin Qubits In Nanowiresmentioning

confidence: 94%

“…Similar to the quantum dots discussed in previous sections, the properties of hole-spin qubits in Si reflect the presence of a strong spin-orbit interaction, which can be studied through the leakage current in the Pauli-spin-blockade regime [185,188,194], as well as through spectroscopic studies [22,192] (where the Si quantum dots are coupled to resonators). A spin-orbit length of λ so ∼ 110 nm was estimated in the planar double dot of [185], and λ so ≃ 48 nm in the FinFET of [194].…”

Section: Spin-orbit Interactionmentioning

confidence: 97%

“…In all of them, the quantum dots are formed by charge accumulation at the Si/oxide interface, induced by top metallic gates. Panel (a) represents a planar geometry [185][186][187], while in panel (b) the quantum dots are based on a nanowire field-effect transistor (FET) [22,59,[188][189][190][191][192]. In the FinFET geometry of panel (c), similar to a nanowire, holes are confined at the top of a Si extrusion with a triangular cross-section [81,184,193].…”

Section: Hole-spin Qubits In Silicon Devicesmentioning

confidence: 99%

“…A detailed analysis of the spin-flip tunneling amplitude was performed recently in a nanowire-FET double quantum dot [22], where t F is a crucial parameter to achieve strong coupling of a single-hole spin (hosted in a double quantum dot) to a superconducting resonator. The strength of the spin-flip tunneling amplitude depends on the relative angle between nSO (the direction of the spin-orbit field) and n = ← → g • B (where ← → g is the g-tensor, assumed equal for the two quantum dots; n is the natural quantization direction for the hole-spins).…”

Section: Spin-orbit Interactionmentioning

confidence: 99%

“…Despite this general difficulty, and the late start of hole devices in terms of fabrication, in recent years hole-spin qubits have achieved remarkable results. In many aspects concerning single-spin manipulation [16][17][18][19], scalability [20,21], as well as the coupling to superconducting circuits [22], hole-spin qubits can approach and sometimes already surpass the performance of electron-spin qubits.…”

mentioning

confidence: 99%

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Recent advances in hole-spin qubits

Fang

Philippopoulos

Culcer

et al. 2023

Mater. Quantum. Technol.

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In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a rapid pace. We first review the main potential advantages of these hole-spin qubits with respect to their electron-spin counterparts, and give a general theoretical framework describing them. The basic features of spin-orbit coupling and hyperfine interaction in the valence band are discussed, together with consequences on coherence and spin manipulation. In the second part of the article we provide a survey of experimental realizations, which spans a relatively broad spectrum of devices based on GaAs, Si, or Si/Ge heterostructures. We conclude with a brief outlook.

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Section: Hole-spin Qubits In Nanowiresmentioning

confidence: 94%

Section: Spin-orbit Interactionmentioning

confidence: 97%

Section: Hole-spin Qubits In Silicon Devicesmentioning

confidence: 99%

Section: Spin-orbit Interactionmentioning

confidence: 99%

mentioning

confidence: 99%

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Recent advances in hole-spin qubits

Fang

Philippopoulos

Culcer

et al. 2023

Mater. Quantum. Technol.

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Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Liu,

Guan,

Luo

et al. 2024

Adv Funct Materials

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Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon‐based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate‐defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group‐IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy‐hole–light‐hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state‐of‐the‐art in semiconductor quantum computing and suggests avenues for future research.

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Hybrid Quantum Systems with Artificial Atoms in Solid State

Chia,

Huang,

Leong

et al. 2024

Adv Quantum Tech

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The development of single‐platform qubits, predominant for most of the last few decades, has driven the progress of quantum information technologies but also highlighted the limitations of various platforms. Some inherent issues, such as charge/spin noise in materials hinder certain platforms, while increased decoherence upon attempts to scale up severely impacts qubit quality and coupling on others. In addition, a universal solution for coherent information transfer between quantum systems remains lacking. By combining one or more qubit platforms, one could potentially create new hybrid platforms that might alleviate significant issues that current single‐platform qubits suffer from, and in some cases, even facilitate the conversion of static to flying qubits on the same hybrid platform. While nascent, this is an area of rising importance that could shed new light on robust and scalable qubit development and provide new impetus for research directions. Here, the requirements for hybrid systems are defined with artificial atoms in the solid state, exemplified with systems that are proposed or attempted, and conclude with the outlook for such hybrid quantum systems.

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Strong coupling between a photon and a hole spin in silicon

Cited by 43 publications

References 35 publications

Recent advances in hole-spin qubits

Recent advances in hole-spin qubits

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Hybrid Quantum Systems with Artificial Atoms in Solid State

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