Strong Anisotropic Two-Dimensional In₂Se₃ for Light Intensity and Polarization Dual-Mode High-Performance Detection

Abstract

Detecting the light from different freedom is of great significance to gain more information. Two-dimensional (2D) materials with low intrinsic carrier concentration and highly tunable electronic structure have been considered as the promising candidate for future room-temperature multi-functional photodetectors. However, current investigations mainly focus on intensity-sensitive detection; the multi-dimensional photodetection such as polarization-sensitive photodetection is still in its early stage. Herein, the intensity-and polarization-sensitive photodetection based on α-In 2 Se 3 is studied. By using angle-resolved polarized Raman spectroscopy, it is demonstrated that α-In 2 Se 3 shows an anisotropic phonon vibration property indicating its asymmetric structure. The α-In 2 Se 3 -based photodetector has a photoelectric performance with a responsivity of 1936 A/W and a specific detectivity of 2.1 × 10 13 Jones under 0.2 mW/cm 2 power density at 400 nm. Moreover, by studying the polarized angleresolved photoelectrical effect, it is found that the ratio of maximum and minimum photocurrent (dichroic ratio) reaches 1.47 at 650 nm suggesting good polarization-sensitive detection. After post-annealing, α-In 2 Se 3 in situ converts to β-In 2 Se 3 which has similar inplane anisotropic crystallinity and exhibits a dichroic ratio of 1.41. It is found that the responsivity of β-In 2 Se 3 is 6 A/W, much lower than that of α-In 2 Se 3 . The high-performance light intensity-and polarization-detection of α-In 2 Se 3 enlarges the 2D anisotropic materials family and provides new opportunities for future dual-mode photodetection.

α-In2Se3 Nanostructure-Based Photodetectors for Tunable and Broadband Response

“…The electron mobility of 2D In 2 Se 3 FET was calculated to be 1.45 cm 2 V –1 s –1 , which is higher than previously reported values for III–VI group materials like GaX (X = S, Se) . However, better performance was achieved recently on α-In 2 Se 3 -based ferroelectric FET by introducing 10 nm Al 2 O 3 as a passivation layer, and the highest carrier mobilities could reach up to 312 cm 2 V –1 s –1 , which is much higher than our result or previously reported other results. , The low carrier mobilities may be ascribed to the following reasons: First, the nonohmic contact between Ni and α-In 2 Se 3 may lower the carrier mobility in the device. Second, as introduced in the Experimental Section, the source/drain electrodes were fabricated using magnetron sputtering, which may cause undesired damage and contamination to the atomically thin lattices, thus degrading the device’s performance. − Third, it is well known that mechanical exfoliation can usually produce more perfect 2D materials than CVD or PVD methods.…”

“…38 V −1 s −1 , which is much higher than our result or previously reported other results. 39,40 The low carrier mobilities may be ascribed to the following reasons: First, the nonohmic contact between Ni and α-In 2 Se 3 may lower the carrier mobility in the device. Second, as introduced in the Experimental Section, the source/drain electrodes were fabricated using magnetron sputtering, which may cause undesired damage and contamination to the atomically thin lattices, thus degrading the device's performance.…”

Strain Tune Suspended MoS2 for Polarization Photodetection

“…Recent studies reveal that some common 1D and 2D materials have a large dichroic ratio, around 1.40, such as PdSe 2 (1.3 at 532 nm), [ 41 ] In 2 SnS 4 (1.33 at 650 nm), [ 42 ] GeSe (1.44 at 638 nm), [ 43 ] and In 2 Se 3 (1.47 at 650 nm). [ 10 ] It can be seen that when the pressure reaches 60 kPa, MoS 2 photodetector exhibits a performance comparable to these materials.…”

“…[1][2][3][4][5] As a typical member of the TMDCs family, molybdenum disulfide (MoS 2 ) has attracted considerable attention due to its unique photoelectric properties, such as higher carrier mobility, tunable bandgap, and strong optical absorption in the visible range. [5][6][7][8][9][10] Moreover, 2D MoS 2 exhibits excellent mechanical properties, the Young's modulus, and breaking strength of monolayer MoS 2 can reach 270 and 22 GPa, respectively, and can withstand up to 11% strain before fracture, making it suitable for flexible electronics applications. Combined with the realization of wafer-scale growth strategies, 2D MoS 2 has been considered as the most promising candidate for potential industrial applications.…”

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

“…Of note, this value even far exceeds the theoretical dichroic ratio ceiling (≈1.8) of bulk Bi 2 S 3 predicted by a previous study, 37 which suggests the determinant effect of extrinsic quantum tailoring. In addition, the dichroic ratio is competitive among the state-of-the-art polarization-sensitive photodetectors based on various materials, such as KNb 3 O 8 , 64 Sb 2 Se 3 , 11 Bi 1.3 In 0.7 Se 3 , 65 SbBiS 3 , 42 (BA) 2 (FA)Pb 2 I 7 , 66 SnS, 67 In 2 Se 3 , 68 ZrS 3 , 69 SiP 2 , 70 GeS 2 , 71 CrPS 4 , 72 GaPS 4 , 73 and Cs 2 AgBiBr 6 , 74 as well as various heterostructures such as Sb 2 Se 3 /GaN 75 (Fig. S27, ESI†).…”