Our system is currently under heavy load due to increased usage. We're actively working on upgrades to improve performance. Thank you for your patience.
2019
DOI: 10.1039/c9cp04993b
|View full text |Cite
|
Sign up to set email alerts
|

Strong and efficient doping of monolayer MoS2 by a graphene electrode

Abstract: Monolayer MoS2 is efficiently doped in a complete electrochemical setup using graphene simultaneously as the electrode and protective spacer.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

5
33
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
7

Relationship

3
4

Authors

Journals

citations
Cited by 22 publications
(39 citation statements)
references
References 45 publications
5
33
0
Order By: Relevance
“…For purposes of the substrate comparison, we disregard the possible effects of charge doping, which causes E′ mode shifts smaller than 1 cm –1 for the charge carrier density up to nearly 10 14 cm –2 . [ 15 ] The strain median, which was chosen to capture the mean values of the diverse E′ mode shapes in Figure 3a, increases from 0.7% on Pd, to 1.3% on Pt, 1.4% on Ag, and 1.5% on Au. The E′ mode on Au is nearly symmetric and fittable with a single Voigt line shape but broader than on SiO 2 (cf.…”
Section: Figurementioning
confidence: 99%
“…For purposes of the substrate comparison, we disregard the possible effects of charge doping, which causes E′ mode shifts smaller than 1 cm –1 for the charge carrier density up to nearly 10 14 cm –2 . [ 15 ] The strain median, which was chosen to capture the mean values of the diverse E′ mode shapes in Figure 3a, increases from 0.7% on Pd, to 1.3% on Pt, 1.4% on Ag, and 1.5% on Au. The E′ mode on Au is nearly symmetric and fittable with a single Voigt line shape but broader than on SiO 2 (cf.…”
Section: Figurementioning
confidence: 99%
“…The observed strain and doping are among the highest observed to date. 9 , 12 , 14 , 15 , 18 , 23 25 Several previous studies of the MoS 2 /Au heterostructure report the Raman spectra. Upshifts of both the E′/E 2g 1 and A 1 ′/A 1g modes with the MoS 2 thickness were observed using a low-resolution spectrometer, 3 , 10 consistent with Figure 1 c if heavily averaged spectra are considered.…”
mentioning
confidence: 99%
“…The n-doping of 1L MoS 2 in contact with Au, proven by XPS, UPS, and KPFM, corroborates that it is the increased electron concentration which is responsible for the A 1 ′(L) downshift, in line with electrochemically gated MoS 2 experiments. 14 , 15 , 18 Nevertheless, one could envisage alternative explanations. The strong binding in MoS 2 –Au heterostructures with a clean interface could cause softening of the Mo–S bonds, 26 instead of the stiffening seen for the contaminated MoS 2 –Au interface.…”
mentioning
confidence: 99%
“…[4] Similar doping techniques have been applied to control the charge state in atomically thin materials; in particular, to tune the zero-phonon line in hexagonal boron nitride (hBN), [5] to electrically drive singlephoton emission in tungsten diselenide (WSe 2 ) and tungsten graphene electrodes and ionic liquids at room temperature. [24,25] The ionic liquid-gated field-effect transistors based on TMD monolayers have also enabled the quantitative study of their electronic properties. [26,27] Electrical control of quantum emission is especially interesting for applications that require coupling of excitonic materials with photonic and plasmonic integrated devices.…”
Section: Introductionmentioning
confidence: 99%
“…[ 23 ] Finally, the electrochemical doping approach provides great reversibility and high doping densities of n ≈ 10 14 cm −2 at low voltages of 1–2 V, as it has been demonstrated in experiments on WSe 2 and molybdenum disulfide (MoS 2 ) monolayers using graphene electrodes and ionic liquids at room temperature. [ 24,25 ] The ionic liquid‐gated field‐effect transistors based on TMD monolayers have also enabled the quantitative study of their electronic properties. [ 26,27 ]…”
Section: Introductionmentioning
confidence: 99%